DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD906; BGD906MI
CATV amplifier modules
Product specification
Supersedes data of 1999 Mar 22
2000 Mar 28
Philips Semiconductors
Product specification
CATV amplifier modules
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Excellent return loss properties
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC).
Both modules are electrically identical, only the pinning is
different.
Side view
BGD906; BGD906MI
PINNING - SOT115J
DESCRIPTION
PIN
BGD906
1
2, 3
5
7, 8
9
input
common
+V
B
common
output
BGD906MI
output
common
+V
B
common
input
handbook, halfpage
1
2
3
5
7
8
9
MSA319
Fig.1 Simplified outline SOT115J.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 50 MHz
f = 900 MHz
V
B
= 24 V; T
mb
= 35
°C
MIN.
21.2
22
405
MAX.
21.8
23
435
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
B
V
i
T
stg
T
mb
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−
−40
−20
MIN.
MAX.
30
70
+100
+100
V
dBmV
°C
°C
UNIT
2000 Mar 28
2
Philips Semiconductors
Product specification
CATV amplifier modules
CHARACTERISTICS
Bandwidth 40 to 900 MHz; V
B
= 24 V; T
mb
= 35
°C;
Z
S
= Z
L
= 75
Ω
SYMBOL
G
p
SL
FL
s
11
PARAMETER
power gain
slope straight line
flatness straight line
input return losses
f = 50 MHz
f = 900 MHz
f = 40 to 900 MHz
f = 40 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 900 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 900 MHz
s
21
CTB
phase response
composite triple beat
f = 50 MHz
49 chs flat; V
o
= 47 dBmV; f
m
= 859.25 MHz
77 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
110 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
129 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
129 chs; f
m
= 697.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
X
mod
cross modulation
49 chs flat; V
o
= 47 dBmV; f
m
= 55.25 MHz
77 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
110 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
129 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
129 chs; f
m
= 859.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
CONDITIONS
BGD906; BGD906MI
MIN.
21.2
22
0.5
−
22
21
18
17
16
22
21
20
19
18
17
16
−45
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
21.5
22.5
1
−
25
24
23
23
20
25
25
23
22
24
23
21
−
−68.5
−70
−63
−59
−62.5
−57
−64
−67.5
−64
−61
−60
−56.5
MAX.
21.8
23
1.5
±0.35
−
−
−
−
−
−
−
−
−
−
−
−
+45
−66
−67
−61
−57
−60.5
−54.5
−62
−65
−61.5
−60
−58
−55
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
2000 Mar 28
3
Philips Semiconductors
Product specification
CATV amplifier modules
BGD906; BGD906MI
SYMBOL
CSO
PARAMETER
composite second
order distortion
CONDITIONS
49 chs flat; V
o
= 47 dBmV; f
m
= 860.5 MHz
77 chs flat; V
o
= 44 dBmV; f
m
= 548.5 MHz
110 chs flat; V
o
= 44 dBmV; f
m
= 746.5 MHz
129 chs flat; V
o
= 44 dBmV; f
m
= 860.5 MHz
110 chs; f
m
= 150 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
129 chs; f
m
= 150 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
MIN.
−
−
−
−
−
−
−
−
−
63.5
64.5
66.5
48.5
51
−
−
−
−
405
TYP.
−63
−74
−66
−59
−64
−60
−83
−81.5
−79
64.5
66.5
69
49
54
5
4.5
5
6
420
MAX.
−59
−65
−58
−54
−60
−54
−70
−73
−76
−
−
−
−
−
5.5
5
6
7.5
435
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dBmV
dBmV
dBmV
dB
dB
dB
dB
mA
d
2
second order distortion
note 3
note 4
note 5
V
o
output voltage
d
im
=
−60
dB; note 6
d
im
=
−60
dB; note 7
d
im
=
−60
dB; note 8
CTB compression = 1 dB; 129 chs flat;
f = 859.25 MHz
CSO compression = 1 dB; 129 chs flat;
f = 860.5 MHz
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 900 MHz
I
tot
total current
consumption (DC)
note 9
Notes
1. Tilt = 9 dB (50 to 550 MHz)
tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
4. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
5. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 493.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 548.5 MHz.
6. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
−6
dB;
f
r
= 860.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
7. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
−6
dB;
f
r
= 749.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
8. Measured according to DIN45004B:
f
p
= 540.25 MHz; V
p
= V
o
;
f
q
= 547.25 MHz; V
q
= V
o
−6
dB;
f
r
= 549.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 538.25 MHz.
9. The module normally operates at V
B
= 24 V, but is
able to withstand supply transients up to 35 V.
2000 Mar 28
4
Philips Semiconductors
Product specification
CATV amplifier modules
BGD906; BGD906MI
handbook, halfpage
−50
MGS661
52
Vo
(dBmV)
handbook, halfpage
−50
MGS662
52
Vo
CTB
(dB)
−60
(1)
(2)
(3)
(4)
(2)
(3)
(4)
Xmod
(dB)
−60
(2)
(3)
(4)
(1)
(2)
(3)
(4)
(dBmV)
48
48
−70
(1)
44
−70
(1)
44
−80
40
−80
40
−90
0
200
400
600
f (MHz)
36
800
−90
0
200
400
600
f (MHz)
36
800
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
handbook, halfpage
−50
MGS663
52
Vo
(dBmV)
48
CSO
(dB)
−60
(2)
(1)
(1)
(3)
(2)
−70
(3)
(4)
(4)
44
−80
40
−90
0
200
400
600
f (MHz)
36
800
Z
S
= Z
L
= 75
Ω;
V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−6
dB offset (550 to 750 MHz).
(1) V
o
.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
−3 σ.
Fig.4
Composite second order distortion as a
function of frequency under tilted conditions.
2000 Mar 28
5
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