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BGX400

Description
1 A, 400 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size40KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BGX400 Overview

1 A, 400 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BGX400 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT-23
package instructionSOT-23, PLALSTIC, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Maximum non-repetitive peak forward current2 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.001 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BGX400
Silicon Switching Diodes
Switching applications
High breakdown voltage
Halfbridge rectifier
3



2
1
1
3
2
EHA07365
VPS05161
Type
BGX400
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Marking
GXs
1=C1/A2
Pin Configuration
2=C2
3=A1
Package
SOT23
Symbol
V
R
V
RM
I
F
I
FS
P
tot
T
j
T
stg
Value
400
400
250
2
250
150
-65 ... 150
Unit
V
mA
A
mW
°C
Surge forward current, t = 1 ms
Total power dissipation,
T
S
= 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS

315
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Aug-20-2001

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