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P6KA6.8

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
Categorysemiconductor    Discrete semiconductor   
File Size83KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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P6KA6.8 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC

P6KA6.8 thru P6KA43A
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
DO-204AC (DO-15)
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
PRIMARY CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
T
J
max.
6.8 V to 43 V
600 W
5.0 W
75 A
185 °C
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over passivated
junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs
(1)
(fig. 1)
Pulse pulse current with a 10/1000 µs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 50 A
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
600
See next table
5.0
75
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Operating junction and storage temperature range
Notes
(1)
(2)
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
Document Number: 88368
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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