SPX-62S datasheet, PDF - EEWORLD Datasheet

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SPX-62S: Description6 A, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size17KB，1 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/

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SPX-62S Overview

6 A, SILICON, RECTIFIER DIODE

SPX-62S Parametric

Parameter Name	Attribute value
Parts packaging code	TO-252
package instruction	R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
application	ULTRA FAST RECOVERY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	80 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.03 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Base Number Matches	1

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Ultra-Fast-Recovery Rectifier Diodes (Power Surface Mount)

Absolute Maximum Ratings

Parameter

Type No.

(V)

F (AV)

(A)

FSM

(A)

50Hz

Half-cycle Sinewave

Single Shot

(°C)

Tstg

(°C)

(V)

max per

element

(µA)

(A)

Electrical Characteristics (Ta = 25°C)

(H)

(ns)

(mA)

Others

Rth ( j-c)

(°C/ W)

Mass

Fig.

(g)

= V

RM,

Ta=100°C

max per element max per element

SPX-G32S

200

3.0

6.0

–40 to +150 0.98 3.0

30 100/100

100/200

5.0

0.41

SPX-62S

SPX-G32S

Average Forward Current I

F (AV)

(A)

Tc—I

F(AV)

Derating

=200V

—I

Characteristics

(Typical)

FSM

(A)

FMS

Rating

FSM

(A)

Sinewave

D.C.

Forward Current I

(A)

20ms

Peak Forward Surge Current

t /T = 1/6

0.1

= 150ºC

100ºC

60ºC

25ºC

t /T = 1/3

t /T = 1/2

0.01

120

125

130 135 140 145

Case Temperature Tc

(°C)

150

0.001

0.2

0.4 0.6 0.8 1.0 1.2

Forward Voltage V

(V)

1.4

Overcurrent Cycles

SPX-62S

Average Forward Current I

F (AV)

(A)

Tc—I

F(AV)

Derating

=200V

—I

Characteristics

(Typical)

Forward Current I

(A)

FSM

(A)

FMS

Rating

FSM

(A)

20ms

D.C.

Peak Forward Surge Current

t /T = 1/2

Sinewave

t /T = 1/3

t /T = 1/6

0.1

= 150ºC

100ºC

60ºC

25ºC

0.01

100

120

140

160

0.001

0.2

Case Temperature Tc

(°C)

0.4 0.6 0.8 1.0 1.2

Forward Voltage V

(V)

1.4

Overcurrent Cycles

(Unit: mm)

Flammability:

UL94V-0 or Equivalent

1.7

±0.5

5.4

±0.4

2.9

1.37

0.7

5.0

5.5

±0.4

1.2max

2.5

±0.4

1.15

±0.1

2.29

±0.5

2.29

±0.5

4.9

0 to 0.25

0.5

±0.2

0.8

±0.1

0.8

±0.1

0.16

External Dimensions

Fig.

6.5

±0.4

2.3

±0.4

0.55

±0.1

5.4

4.1

±0.1

2 (Common to backside of case)

Cathode

Cathode (Common)

Anode

0.55

1.5 max

Type No.

Polarity

Lot No.

SPX-G32S

SPX-62S

N.C

Anode

SPX-62S Related Products

	SPX-62S	SPX-G32S
Description	6 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE
Parts packaging code	TO-252	TO-252
package instruction	R-PSSO-G2	R-PSSO-G2
Contacts	3	3
Reach Compliance Code	unknow	unknow
application	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY
Shell connection	CATHODE	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Maximum non-repetitive peak forward current	80 A	50 A
Number of components	2	1
Phase	1	1
Number of terminals	2	2
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C
Maximum output current	6 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	200 V
Maximum reverse recovery time	0.03 µs	0.03 µs
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE

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