DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D373
BGY212A
UHF amplifier module
Preliminary specification
1999 Aug 23
Philips Semiconductors
Preliminary specification
UHF amplifier module
FEATURES
•
3.5 V nominal supply voltage
•
2 W output power
•
Easy output power control by DC voltage.
APPLICATIONS
•
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
1710 to 1785 MHz frequency range.
DESCRIPTION
book, halfpage
BGY212A
PINNING - SOT482C
PIN
1
2
3
4
5
V
C
V
S
RF output
ground
DESCRIPTION
RF input
The BGY212A is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover. The
module consists of one NPN silicon planar transistor die
and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
5
4
3
2
1
MBK201
Bottom view
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C.
MODE OF
OPERATION
Pulsed;
δ
= 1 : 8
f
(MHz)
1710 to 1785
V
S
(V)
3.5
V
C
(V)
≤2.2
P
L
(dBm)
typ. 33
G
p
(dB)
typ. 33
η
(%)
typ. 40
Z
S
, Z
L
(Ω)
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
S
V
C
P
D
P
L
T
stg
T
mb
PARAMETER
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
CONDITIONS
V
C
< 0.2 V; P
D
= 0 mW
V
C
≥
0.2 V
−
−
−
−
−
−40
−30
MIN.
7
4.1
2.7
10
34.1
+100
+100
MAX.
V
V
V
dBm
dBm
°C
°C
UNIT
1999 Aug 23
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
CHARACTERISTICS
Z
S
= Z
L
= 50
Ω;
P
D
= 0 dBm; V
S
= 3.5 V; V
C
≤
2.2 V; f = 1710 to 1785 MHz; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs
unles
otherwise specified.
SYMBOL
I
Q
I
CM
P
L
PARAMETER
leakage current
peak control current
load power
V
C
= 0.2 V
V
C
= 0.2 V; V
S
= 7 V
adjust V
C
for P
L
= 32 dBm
V
C
= 2.2 V; V
S
= 3.5 V
V
C
= 2.2 V; V
S
= 3.2 V
V
C
= 2.2 V; V
S
= 3.2 V; T
mb
= 85
°C
G
p
η
H
2
H
3
VSWR
in
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 2 to 32 dBm
V
S
= 3.2 to 4.1 V; P
D
=
−3
to 3 dBm;
V
C
= 0 to 2.2 V; P
L
≤
33 dBm;
VSWR
≤
8 : 1 through all phases
V
C
= 0.2 V; P
D
= 3 dBm
P
L
= 2 to 32 dBm;
bandwidth = 100 kHz; 20 MHz above
transmission band
P
D
with 3% AM; f = 100 kHz;
P
L
= 2 to 32 dBm
P
D
=
−0.5
to 0.5 dBm;
P
L
= 2 to 32 dBm
P
L
=
−8
to +2 dBm
P
L
= 2 to 32 dBm
T
X
/ R
X
conversion
t
r
t
f
carrier rise time
carrier fall time
ruggedness
P
L
= 32 dBm; f = 1785 MHz
P
L
(1805 MHz) / P
D
(1765 MHz)
P
L
= 2 to 32 dBm; time to settle
within
−0.5
dB of final P
L
P
L
= 2 to 32 dBm; time to fall below
−
33 dBm
V
S
= 4.1 V; adjust V
C
for
P
L
= 33 dBm; VSWR
≤
8 : 1 through
all phases
CONDITIONS
−
−
−
−
32
31
−
−
−
−
−
−
−
MIN.
−
5
−
33.2
32.3
31.8
32
40
−
−
TYP.
MAX.
10
20
3
−
−
−
−
−
−35
−40
3:1
−60
dBc
UNIT
µA
mA
mA
dBm
dBm
dBm
dB
%
dBc
dBc
isolation
control bandwidth
P
n
noise power
−
tbd
−
−36
−
−73
−33
−
−71
dBm
MHz
dBm
AM/AM conversion
AM/PM conversion
control slope
−
−
−
−
−
−
−
5
−
tbd
tbd
28
1.5
1.5
8
tbd
−
−
30
2
2
%
deg/dB
dB / V
dB / V
dB
µs
µs
no degradation
1999 Aug 23
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
3
P
L
(W)
1710MHz
4
P
L
(W)
1710MHz
1785MHz
3
2
1785MHz
2
1
1
0
1
1.5
2
V
C
(V)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
0
2.5
2
3
4
V
S
(V)
Z
S
= Z
L
= 50
Ω
; V
C
= 2.2 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
5
Fig.2
Load power as a function of control voltage;
typical values.
Fig.3
Load power as a function of supply voltage;
typical values.
50
η
(%)
40
1710MHz
1785MHz
3
P
L
(W)
2
30
20
1
10
0
0
0.5
1
1.5
2
P
L
(W)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
2.5
0
1700
1750
1800
f (MHz)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm; V
C
= 2.2 V;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
Fig.4
Efficiency as a function of load power;
typical values.
Fig.5
Load power as a function of frequency;
typical values.
1999 Aug 23
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
4
VSWR
IN
0
H
2
, H
3
(dBc)
-20
3
H
2
-40
1710MHz
H
3
2
1785MHz
-60
1
0
1
2
P
L
(W)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s
3
-80
1700
1750
1800
f (MHz)
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm; P
L
= 1.6 W;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
µ
s.
Fig.6
Input VSWR as a function of load power;
typical values.
Fig.7
Harmonics as a function of
frequency; typical values.
3
P
L
(W)
(1)
16
output
AM
(%)
12
1710MHz
2
(2)
(3)
(4)
8
1785MHz
1
4
0
0
20
40
60
80
100
T
mb
(°C)
0
-20
0
20
40
P
L
(dBm)
Z
S
= Z
L
= 50
Ω
; P
D
= 0 dBm; V
C
= 2.2 V;
δ
= 1 : 8; t
p
= 575
µ
s.
(1) V
S
= 3.5 V; f = 1710 MHz.
(2) V
S
= 3.5 V; f = 1785 MHz.
(3) V
S
= 3.2 V; f = 1710 MHz.
(4) V
S
= 3.2 V; f = 1785 MHz.
Z
S
= Z
L
= 50
Ω
; V
S
= 3.5 V; P
D
= 0 dBm; T
mb
= 25
°
C;
∆
f = 100 kHz; input amplitude modulation = 3%;
δ
= 1 : 8; t
p
= 575
µ
s.
Fig.8
Load power as a function of mounting
base temperature; typical values.
5
Fig.9
Output amplitude modulation as a
function of load power; typical values.
1999 Aug 23
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