Laser Diode in TO-220 Package
1.0 W cw (Class 4 Laser Product)
SPL 2Yxx
(SFH 4874x1)
Features
•
Efficient radiation source for pulsed and cw-operation
•
Reliable InGa(Al)As strained layer quantum-well material
•
Small TO-220 package with efficient thermal coupling
•
Includes thermistor to control temperature/wavelength
•
Single emitting area 200
µm ×
1 µm
•
Cylindrical correction for a near circular farfield pattern
Applications
•
Pumping solid state lasers (Nd: YAG, Yb: YAG, …)
•
Medical applications
•
Laser soldering
•
Energy transmission
•
Testing and measuring applications
Type
SPL 2Y81
SPL 2Y85
SPL 2Y94
SPL 2Y98
Old Type
(as of Oct. 1996)
SFH 487401
SFH 487421
SFH 487441
–
Wavelength
808 nm
850 nm
940 nm
980 nm
*)
Ordering Code
Q62702-P367
Q62702-P1677
Q62702-P1630
on request
*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Maximum Ratings
(T
A
= 25 °C)
Parameter
Symbol
min.
Output power (continuous wave)
1)
Output power (quasi-continuous wave)
1)
(t
p
≤
150
µs,
duty cycle
≤
1%)
Reverse voltage
Operating temperature
Storage temperature
Maximum soldering temperature, max. 5 s
P
opt
P
qcw
V
R
T
op
T
stg
T
s
–
–
–
– 10
– 40
–
Values
typ.
–
–
–
…
…
–
max.
1.1
1.5
3
+ 60
+ 85
250
W
W
V
°C
°C
°C
Unit
1) Optical power measurements refer to a detector with NA = 0.6
Semiconductor Group
1
02.97
SPL 2Yxx
(SFH 4874x1)
Diode Characteristics
(T
A
= 25 °C)
Parameter
Symbol
min.
Emission wavelength
1)
λ
peak
803
840
935
Values
typ.
808
850
940
2
1.0
0.75
0.75
0.70
0.40
0.30
0.30
1.3
1.3
1.4
0.95
0.85
0.80
0.45
0.40
0.35
1.5
1.5
1.6
2.0
–
0.2
150
0.5
0.25
0.27
10
0.30
0.4
1.1
1.0
0.9
0.55
0.50
0.40
1.8
1.8
1.8
max.
813
860
945
nm
Unit
Spectral width (FWHM)
1)
Output power
2)
Differential efficiency
2)
808 nm
850 nm
940 nm
808 nm
850 nm
940 nm
808 nm
850 nm
940 nm
∆λ
P
opt
η
nm
W
W/A
Threshold current
I
th
A
Operating current
1)
I
op
A
Operating voltage
1)
Differential series resistance
Characteristic temperature (threshold)
3)
Temperature coefficient of operating
current
Temperature coefficient of wavelength
4)
Thermal resistance (junction
→
heat sink)
V
op
r
s
T
0
∂
I
op
/
∂
T
∂λ
/
∂
T
R
th JA
V
Ω
K
%/K
nm/K
K/W
1) Standard operating conditions refer to 1 W cw measured with NA = 0.6
2) Optical power measurements refer to a detector with NA = 0.6
3) Model for the thermal behavior of threshold current:
I
th
(T
2
) =
I
th
(T
1
)
×
exp(T
2
–
T
1
)/T
0
4) Depending on emission wavelength
NTC Thermistor
Parameter
Resistance at room temperature (25 °C)
Symbol Typ. Values
R
NTC
10
Unit
kΩ
Semiconductor Group
2
SPL 2Yxx
(SFH 4874x1)
Optical Characteristics
(T
A
= 25 °C)
Radiant Power
P
opt
vs
I
F
Mode Spectrum
I
rel
vs
λ
(P
opt
= 1.0 W)
Farfield Distribution
Parallel to Junction
I
rel
vs
θ
||
Farfield Distribution
Perpendicular to Junction
I
rel
vs
θ
⊥
Semiconductor Group
3
SPL 2Yxx
(SFH 4874x1)
Notes for Operation
1. Eye Protection
This laser is a
Class 4 Laser
product.
Refer to the relevant safety regulations for protection during handling and operation.
2. Overload Protection
The specified values are valid as long as the diode has not been not overloaded. Voltage
spikes from the power supply unit, even when applied for nanoseconds only, may cause irre-
versible damage to the laser diode. Such spikes may occur when the power supply is turned
on or off, or they may reach the laser diode from the line via the coupling capacitance of
electronically controlled devices.
The power supply should therefore be provided with appropriate protection circuits.
Handling Notes
1. Package
To avoid electrostatic damage it is recommended to observe the same rules as for handling
MOS-devices.
2. Mechanical Attachment
2.1 Mounting hole (suitable for M 2.5)
Because of the good thermal conductivity of the TO 220 base plate (copper) the heat
loss is properly dissipated even if the component is attached on one side only. Some
mounting techniques are shown below (Fig.
1 – 3).
2.2 For exact positioning of the TO component and other parts, e.g. lenses, the TO 220
package can be attached with appropriate clamping devices or screws (max. M 2.5).
3. Soldering
When soldering the TO base to a heat sink, do not exceed the following limits:
•
max. soldering temperature:
125 °C
•
max. soldering time:
1 min.
Semiconductor Group
4
SPL 2Yxx
(SFH 4874x1)
Mounting Techniques
Figure 1
Figure 2
Figure 3
Semiconductor Group
5
Wireless Connectivity
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