SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
KTA1542T
EPITAXIAL PLANAR PNP TRANSISTOR
E
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
A
F
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTC3542T.
C
L
G
High-Speed Switching.
1
E
F
G
H
I
J
K
L
J
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
RATING
-30
-30
-5
-3
-5
-600
0.9
150
-55
)
150
UNIT
V
V
V
A
mA
W
1. EMITTER
2. BASE
3. COLLECTOR
Marking
Lot No.
Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Swiitching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=-30V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10 A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10 A, I
C
=0
I
C
=-1.5A, I
B
=-30mA
I
C
=-1.5A, I
B
=-75mA
I
C
=-1.5A, I
B
=-30mA
V
CE
=-2V, I
C
=-500mA
V
CE
=-10V, I
C
=-500mA
V
CB
=-10V, f=1MHz
PW=20µs
DC
<
1%
=
I
B1
I
B2
R
B
50Ω
V
R
100µF
470µF
V
CC
=-12V
24Ω
OUTPUT
MIN.
-
-
-30
-30
-5
-
-
-
200
-
-
-
Storage Time
t
stg
Fall Time
t
f
V
BE
=5V
-20I
B1
=20I
B2
=I
C
=-500mA
2001. 6. 29
Revision No : 0
I
J
MAXIMUM RATING (Ta=25
)
H
TSM
SH
TYP.
-
-
-
-
-
-155
-105
-0.83
-
380
25
50
MAX.
-0.1
-0.1
-
-
-
-230
-155
-1.2
560
-
-
-
MHz
pF
UNIT
A
A
V
V
V
mV
mV
V
-
270
-
nS
-
25
-
1/3
KTA1542T
I
C
- V
CE
mA
h
FE
- I
-10mA
-8.0mA
C
-2.0
COLLECTOR CURRENT I
C
(A)
-1.6
-1.2
1K
DC CURRENT GAIN h
FE
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
-30
mA
-50
-2
A
0m
V
CE
=-2V
-40mA
-6.0mA
-4.0mA
100
50
30
-0.8
-2.0mA
-0.4
0
0
-200
-400
-600
I
B
=0mA
-800
-1K
10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR-EMITTER VOLTAGE V
CE
(mV)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-0.005
-0.003
-0.001
-0.01
C
75
Ta=
C
25
Ta=
V
CE(sat)
- I
C
-10
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-0.01
75 C
Ta=
25 C
Ta=
I
C
/I
B
=20
I
C
/I
B
=50
C
25
a=-
T
5
=-2
Ta
C
-0.03
-0.1
-0.3
-1
-3
-10
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
V
BE(sat)
- I
C
-10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(mV)
-5
-3
I
C
/I
B
=50
I
C
- V
BE
-4.0
COLLECTOR CURRENT I
C
(A)
-3.5
-3.0
Ta=75
C
Ta=2
5 C
Ta=-25
C
V
CE
=-2V
-2.5
-2.0
-1.5
-1.0
-0.5
0
0
-0.2
-0.4
-1
-0.5
-0.3
Ta=-25 C
Ta=25 C
Ta=75 C
-0.1
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
-0.6
-0.8
-1.0
-1.2
COLLECTOR CURRENT I
C
(A)
BASE-EMITTER VOLTAGE V
BE
(V)
2001. 6. 29
Revision No : 0
2/3
KTA1542T
f
T
-I
C
COLLECTOR OUTPUT CAPACITANCE
C
ob
(pF)
TRANSIION FREQUENCY f
T
(MHz)
1K
500
300
100
V
CE
=-10V
C
ob
- V
CB
f=1MHz
70
50
30
100
50
30
10
10
-1
-3
-5
-10
-30
-10
-30
-100
-300
-1K
-3K
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-BASE VOLTAGE V
CB
(V)
SAFE OPERATING AREA
-10
COLLECTOR POWER DISSIPATION
P
C
(W)
COLLECTOR CURRENT I
C
(A)
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-0.1
I
C
MAX.(PULSED)
I
C
MAX
(CONTIN-
UOUS)
DC
Pc - Ta
1m
1.2
MOUNTED ON A
10
S*
S
0
µ
*
50
S
0
µ
10
1.0
0.8
0.6
0.4
0.2
0
CERAMIC BOARD
(600mm
2
0.8mm)
10
0m
OP
S*
ER
AT
IO
N
mS
*
*
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm
2
0.8mm)
0
20
40
60
80
100
120
140
160
-0.3-0.5
-1
-3 -5
-10
-30 -50
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2001. 6. 29
Revision No : 0
3/3
Embedded System
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