PBHV8118T
180 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
Rev. 01 — 7 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive power management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 10 V;
I
C
= 50 mA
[1]
Conditions
open base
Min
-
-
100
Typ
-
-
250
Max
180
1
-
Unit
V
A
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Graphic symbol
3
1
3. Ordering information
Table 3.
Ordering information
Package
Name
PBHV8118T
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
LZ*
Type number
PBHV8118T
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBHV8118T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 7 May 2010
2 of 13
NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
−55
−65
Max
400
180
6
1
2
400
300
150
+150
+150
Unit
V
V
V
A
A
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P
tot
(mW)
300
006aab150
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Power derating curve
PBHV8118T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 7 May 2010
3 of 13
NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
417
70
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
006aab151
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8118T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 7 May 2010
4 of 13
NXP Semiconductors
PBHV8118T
180 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
Conditions
V
CB
= 144 V; I
E
= 0 A
V
CB
= 144 V; I
E
= 0 A;
T
j
= 150
°C
Min
-
-
-
-
[1]
Typ
-
-
-
-
Max
100
10
100
100
Unit
nA
μA
nA
nA
I
CES
I
EBO
h
FE
collector-emitter cut-off V
CE
= 144 V; V
BE
= 0 V
current
emitter-base cut-off
current
DC current gain
V
EB
= 4 V; I
C
= 0 A
V
CE
= 10 V
I
C
= 50 mA
I
C
= 100 mA
I
C
= 0.5 A
100
100
50
[1]
[1]
[1]
250
250
100
40
33
1
7
565
572
1320
740
2060
30
5.7
150
-
-
-
60
50
1.2
-
-
-
-
-
-
-
-
-
mV
mV
V
ns
ns
ns
ns
ns
ns
MHz
pF
pF
V
CEsat
V
BEsat
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
C
e
[1]
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 10 mA
I
C
= 100 mA; I
B
= 20 mA
-
-
-
-
-
-
-
-
-
base-emitter saturation I
C
= 0.5 A; I
B
= 100 mA
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
emitter capacitance
V
CE
= 10 V; I
C
= 10 mA;
f = 100 MHz
V
CB
= 20 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
V
CC
= 6 V; I
C
= 0.5 A;
I
Bon
= 0.1 A; I
Boff
=
−0.1
A
-
-
-
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
PBHV8118T
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 7 May 2010
5 of 13
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