PBLS1501V datasheet, PDF - EEWORLD Datasheet

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PBLS1501V: Description15 V PNP BISS loadswitch; CategoryDiscrete semiconductor The transistor; File Size82KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBLS1501V Overview

15 V PNP BISS loadswitch

PBLS1501V Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	PLASTIC PACKAGE-6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-F6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	280 MHz

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PBLS1501Y; PBLS1501V

15 V PNP BISS loadswitch

Rev. 02 — 24 August 2009

Product data sheet

1. Product proﬁle

1.1 General description

Low V

CEsat

PNP transistor and NPN resistor-equipped transistor in one package.

Table 1.

Product overview

Package

NXP

PBLS1501Y

PBLS1501V

SOT363

SOT666

JEITA

SC-88

Type number

1.2 Features

Low V

CEsat

(BISS) transistor and resistor-equipped transistor in one package

Low ‘threshold’ voltage (< 1 V) compared to MOSFET

Low drive power required

Space-saving solution

Reduction of component count

1.3 Applications

Supply line switches

Battery charger switches

High-side switches for LEDs, drivers and backlights

Portable equipment

1.4 Quick reference data

Table 2.

Symbol

CEO

CEsat

Quick reference data

Parameter

collector-emitter voltage

collector-current (DC)

equivalent on-resistance

= −500

mA;

= −50

open base

Conditions

open base

Min

Typ

300

Max

−15

−500

500

Unit

mΩ

TR1; PNP: low V

CEsat

transistor

TR2; NPN: resistor-equipped transistor

CEO

collector-emitter voltage

PBLS1501V Related Products

	PBLS1501V	PBLS1501Y
Description	15 V PNP BISS loadswitch	15 V PNP BISS loadswitch
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	PLASTIC PACKAGE-6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30	30
JESD-30 code	R-PDSO-F6	R-PDSO-G6
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN AND PNP	NPN AND PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	FLAT	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	280 MHz	280 MHz

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