EEWORLDEEWORLDEEWORLD

Part Number

Search

PBLS1502V

Description
15 V PNP BISS loadswitch
CategoryDiscrete semiconductor    The transistor   
File Size82KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBLS1502V Overview

15 V PNP BISS loadswitch

PBLS1502V Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)280 MHz
PBLS1502Y; PBLS1502V
15 V PNP BISS loadswitch
Rev. 03 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
Low V
CEsat
PNP transistor and NPN resistor-equipped transistor in one package.
Table 1.
Product overview
Package
NXP
PBLS1502Y
PBLS1502V
SOT363
SOT666
JEITA
SC-88
-
Type number
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) transistor and resistor-equipped transistor in one package
Low ‘threshold’ voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector-current (DC)
equivalent on-resistance
I
C
= −500
mA;
I
B
= −50
mA
open base
Conditions
open base
Min
-
-
-
Typ
-
-
300
Max
−15
−500
500
Unit
V
mA
mΩ
TR1; PNP: low V
CEsat
transistor
TR2; NPN: resistor-equipped transistor
V
CEO
collector-emitter voltage
-
-
50
V

PBLS1502V Related Products

PBLS1502V PBLS1502Y
Description 15 V PNP BISS loadswitch 15 V PNP BISS loadswitch
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction PLASTIC PACKAGE-6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30
JESD-30 code R-PDSO-F6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN AND PNP NPN AND PNP
Maximum power dissipation(Abs) 0.2 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 280 MHz 280 MHz
Message response under doc/view architecture
I created a single document project under WinCE, added the EraseBkgnd message response in CMainFrame, set a breakpoint and found that the program did not enter the response. Later, I created another s...
forgetful Embedded System
Field Effect Transistor Knowledge - Common Source Amplifier
Field Effect Transistor Common Source Amplifier Experiment 1. Experimental purpose 1. Clarify the performance and characteristics of field effect tubes 2. Clarify the characteristics of field effect t...
keeptops LED Zone
How to conduct standard ZigBee testing and certification of products
Take the development of standard ZigBee Home Automation related products as an example. First, when developing products, developers must develop products according to the product description in the Zi...
灞波儿奔 Wireless Connectivity
How many times can a general-purpose single-stage op amp amplify the circuit at most?
[i=s] This post was last edited by dontium on 2015-1-23 12:52 [/i] How many times should a general-purpose single-stage operational amplifier be amplified (assuming the performance of the operational ...
xiaoyaopeng Analogue and Mixed Signal
WiFi Repeater/WiFi Relay/Wireless AP Module
WiFi Repeater/WiFi repeater is a hot product in the current WiFi wireless network;WiFi Repeater/WiFi relay consumer groups:It was born out of people's reliance on wireless network applications;●For so...
natertech RF/Wirelessly
The development of electric vehicle controller in our country
Electric vehicle controller - vehicle controller   The development of vehicle controller (electric vehicle controller) includes software and hardware design. The core software is generally developed b...
小赛跑跑 Automotive Electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2154  2138  507  407  2909  44  11  9  59  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号