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PBLS4001Y

Description
40 V PNP BISS loadswitch
CategoryDiscrete semiconductor    The transistor   
File Size97KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBLS4001Y Overview

40 V PNP BISS loadswitch

PBLS4001Y Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
PBLS4001Y; PBLS4001V
40 V PNP BISS loadswitch
Rev. 03 — 12 February 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in one package.
Table 1.
Product overview
Package
NXP
PBLS4001Y
PBLS4001V
SOT363
SOT666
JEITA
SC-88
-
Type number
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
collector-emitter saturation
resistance
collector-emitter voltage
I
C
=
−500
mA;
I
B
=
−50
mA
open base
[1]
Conditions
open base
Min
-
-
-
Typ
-
-
440
Max
−40
−500
700
Unit
V
mA
mΩ
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CEO
-
-
50
V

PBLS4001Y Related Products

PBLS4001Y PBLS4001V
Description 40 V PNP BISS loadswitch 40 V PNP BISS loadswitch
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction SMALL OUTLINE, R-PDSO-G6 PLASTIC PACKAGE-6
Contacts 6 6
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO 1 BUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 200 200
JESD-30 code R-PDSO-G6 R-PDSO-F6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz
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