PBLS4004D
40 V PNP BISS loadswitch
Rev. 03 — 6 January 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
collector-emitter saturation
resistance
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
I
C
=
−500
mA;
I
B
=
−50
mA
open base
Conditions
open base
[1]
[2]
Min
-
-
-
Typ
-
-
240
Max
−40
−1
340
Unit
V
A
mΩ
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CEO
I
O
R1
R2/R1
[1]
[2]
-
-
15.4
0.8
-
-
22
1
50
100
28.6
1.2
V
mA
kΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
1
2
3
sym036
Simplified outline
6
5
4
Graphic symbol
6
5
4
1
2
3
R1
R2
TR2
TR1
3. Ordering information
Table 3.
Ordering information
Package
Name
PBLS4004D
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
R4
Type number
PBLS4004D
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
Conditions
open emitter
open base
open collector
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
Max
−40
−40
−5
−0.7
−0.85
−1
−2
−0.3
−1
Unit
V
V
V
A
A
A
A
A
A
TR1; PNP low V
CEsat
transistor
I
CM
I
B
I
BM
peak collector current
base current
peak base current
single pulse; t
p
≤
1 ms
single pulse; t
p
≤
1 ms
PBLS4004D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 6 January 2009
2 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
≤
25
°C
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
Max
250
350
400
50
50
10
+40
−10
100
100
200
400
530
600
150
+150
+150
Unit
mW
mW
mW
V
V
V
V
V
mA
mA
mW
mW
mW
mW
°C
°C
°C
TR2; NPN resistor-equipped transistor
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
P
tot
output current
peak collector current
total power dissipation
total power dissipation
single pulse; t
p
≤
1 ms
T
amb
≤
25
°C
T
amb
≤
25
°C
[1]
[2]
[3]
open emitter
open base
open collector
-
-
-
-
-
-
−65
−65
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PBLS4004D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 6 January 2009
3 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
0.8
P
tot
(W)
0.6
(1)
(2)
006aaa461
0.4
(3)
0.2
0
0
40
80
120
160
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2]
[3]
Thermal characteristics
Parameter
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
312
236
210
105
Unit
K/W
K/W
K/W
K/W
Per TR1; PNP low V
CEsat
transistor
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PBLS4004D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 6 January 2009
4 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
10
3
Z
th(j-a)
(K/W)
δ
=1
0.75
0.5
0.33
10
2
0.2
0.1
0.05
10
0.02
0.01
006aaa462
0
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
006aaa463
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
PBLS4004D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 6 January 2009
5 of 15
京公网安备 11010802033920号
EEWORLD
