PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
Rev. 03 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in one package.
Table 1.
Product overview
Package
NXP
PBLS4004Y
PBLS4004V
SOT363
SOT666
JEITA
SC-88
-
Type number
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
Low threshold voltage (<1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
collector-emitter saturation
resistance
collector-emitter voltage
I
C
=
−500
mA;
I
B
=
−50
mA
open base
[1]
Conditions
open base
Min
-
-
-
Typ
-
-
440
Max
−40
−500
700
Unit
V
mA
mΩ
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
V
CEO
-
-
50
V
NXP Semiconductors
PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
Quick reference data
…continued
Parameter
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
Min
-
15.4
0.8
Typ
-
22
1
Max
100
28.6
1.2
Unit
mA
kΩ
Table 2.
Symbol
I
O
R1
R2/R1
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
1
2
3
001aab555
R1
R2
TR2
TR1
Simplified outline
6
5
4
Graphic symbol
6
5
4
1
2
3
sym036
3. Ordering information
Table 4.
Ordering information
Package
Name
PBLS4004Y
PBLS4004V
SC-88
-
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT363
SOT666
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
S4*
K4
Type number
PBLS4004Y
PBLS4004V
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBLS4004Y_PBLS4004V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 16 February 2009
2 of 11
NXP Semiconductors
PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
Conditions
open emitter
open base
open collector
single pulse; t
p
≤
1 ms
single pulse; t
p
≤
1 ms
T
amb
≤
25
°C
open emitter
open base
open collector
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
−40
−40
−6
−500
−1
−50
−100
200
50
50
10
+40
−10
100
100
200
300
150
+150
+150
Unit
V
V
V
mA
A
mA
mA
mW
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
TR1; PNP low V
CEsat
transistor
TR2; NPN resistor-equipped transistor
output current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
single pulse; t
p
≤
1 ms
T
amb
≤
25
°C
[1]
-
-
-
-
−65
−65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Thermal characteristics
Parameter
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PBLS4004Y_PBLS4004V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 16 February 2009
3 of 11
NXP Semiconductors
PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
=
−40
V; I
E
= 0 A
V
CB
=
−40
V; I
E
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−2
V; I
C
=
−10
mA
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
I
C
=
−200
mA; I
B
=
−10
mA
I
C
=
−500
mA; I
B
=
−50
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
transition frequency
collector capacitance
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; I
B
=
−50
mA
V
CE
=
−2
V; I
C
=
−100
mA
I
C
=
−100
mA; V
CE
=
−5
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
µA
V
CE
= 0.3 V; I
C
= 5 mA
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
40
-
-
-
-
-
-
-
100
-
Typ
-
-
-
-
-
-
-
-
-
-
440
-
-
300
-
Max
−100
−50
−100
-
-
-
−50
−130
−200
−350
700
−1.2
−1.1
-
10
Unit
nA
µA
nA
TR1; PNP low V
CEsat
transistor
I
EBO
h
FE
mV
mV
mV
mV
mΩ
V
V
MHz
pF
[1]
[1]
TR2; NPN resistor-equipped transistor
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
© NXP B.V. 2009. All rights reserved.
-
-
-
-
60
-
-
2.5
15.4
0.8
-
-
-
-
-
-
1.1
1.7
22
1
-
100
1
50
180
-
150
0.8
-
28.6
1.2
2.5
nA
µA
µA
µA
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
[1]
PBLS4004Y_PBLS4004V_3
mV
V
V
kΩ
pF
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
-
Product data sheet
Rev. 03 — 16 February 2009
4 of 11
NXP Semiconductors
PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
600
(1)
006aaa388
h
FE
I
C
(A)
I
B
(mA) =
−30
−27
−24
−21
−0.8
−18
−0.6
−1
006aaa394
−15
−12
−9
−6
400
(2)
200
(3)
−0.4
−3
−0.2
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
0
0
−1
−2
−3
−4
−5
V
CE
(V)
V
CE
=
−2
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
T
amb
= 25
°C
Fig 1.
TR1 (PNP): DC current gain as a function of
collector current; typical values
006aaa389
Fig 2.
TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
006aaa392
−1.1
V
BE
(V)
−0.9
−1.1
V
BEsat
(V)
−0.9
(1)
(1)
(2)
−0.7
(2)
−0.7
(3)
(3)
−0.5
−0.5
−0.3
−0.3
−
0.1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−0.1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
=
−2
V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
I
C
/I
B
= 20
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
Fig 3.
TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 4.
TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS4004Y_PBLS4004V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 16 February 2009
5 of 11
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