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PBRN123YT

Description
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
CategoryDiscrete semiconductor    The transistor   
File Size145KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBRN123YT Overview

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ

PBRN123YT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)300
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.57 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PBRN123Y series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 01 — 27 February 2007
Product data sheet
1. Product profile
1.1 General description
800 mA NPN low V
CEsat
Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistors (RET) family in small plastic packages.
Table 1.
Product overview
Package
NXP
PBRN123YK
PBRN123YS
[1]
PBRN123YT
[1]
Type number
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
SOT346
SOT54
SOT23
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
800 mA output current capability
I
High current gain h
FE
I
Built-in bias resistors
I
Simplifies circuit design
I
Low collector-emitter saturation voltage
V
CEsat
I
Reduces component count
I
Reduces pick and place costs
I
±10
% resistor ratio tolerance
1.3 Applications
I
Digital application in automotive and
industrial segments
I
Medium current peripheral driver
I
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
Quick reference data
Parameter
collector-emitter voltage
output current
PBRN123YK, PBRN123YT
PBRN123YS
Conditions
open base
[1]
Min
-
-
-
Typ
-
-
-
Max
40
600
800
Unit
V
mA
mA

PBRN123YT Related Products

PBRN123YT PBRN123Y PBRN123YK PBRN123YS
Description NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ
Is it Rohs certified? conform to - conform to conform to
Maker NXP - NXP NXP
Parts packaging code SOT-23 - SOT-23 TO-92
package instruction PLASTIC PACKAGE-3 - SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, R-PBCY-T3
Contacts 3 - 3 3
Reach Compliance Code compli - unknown unknown
ECCN code EAR99 - EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 4.55 - BUILT-IN BIAS RESISTOR RATIO IS 4.55 BUILT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC) 0.8 A - 0.6 A 0.6 A
Collector-emitter maximum voltage 40 V - 40 V 40 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 300 - 300 300
JEDEC-95 code TO-236AB - TO-236AB TO-92
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PBCY-T3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE CYLINDRICAL
Polarity/channel type NPN - NPN NPN
Maximum power dissipation(Abs) 0.57 W - 0.57 W 0.7 W
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - YES NO
Terminal form GULL WING - GULL WING THROUGH-HOLE
Terminal location DUAL - DUAL BOTTOM
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
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