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PBSS302ND

Description
40 V, 4 A NPN low VCEsat (BISS) transistor
CategoryDiscrete semiconductor    The transistor   
File Size125KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PBSS302ND Overview

40 V, 4 A NPN low VCEsat (BISS) transistor

PBSS302ND Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-74
package instructionPLASTIC, SMD, SC-74, 6 PIN
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)2.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
PBSS302ND
40 V, 4 A NPN low V
CEsat
(BISS) transistor
Rev. 02 — 18 February 2008
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PD.
1.2 Features
I
I
I
I
I
Ultra low collector-emitter saturation voltage V
CEsat
4 A continuous collector current capability I
C
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
1.3 Applications
I
I
I
I
I
I
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t
p
1 ms
I
C
= 6 A;
I
B
= 600 mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
55
Max
40
4
15
75
Unit
V
A
A
mΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Pulse test: t
p
300
µs; δ ≤
0.02.

PBSS302ND Related Products

PBSS302ND PBSS302ND,115
Description 40 V, 4 A NPN low VCEsat (BISS) transistor 4000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SC-74 TSOP
package instruction PLASTIC, SMD, SC-74, 6 PIN PLASTIC, SMD, SC-74, 6 PIN
Contacts 6 6
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 300 300
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 2.5 W 2.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
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