PBSS302PD
40 V, 4 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 6 December 2007
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND.
1.2 Features
I
I
I
I
I
Ultra low collector-emitter saturation voltage V
CEsat
4 A continuous collector current capability I
C
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
1.3 Applications
I
I
I
I
I
I
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t
p
≤
1 ms
I
C
=
−6
A;
I
B
=
−600
mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
55
Max
−40
−4
−15
75
Unit
V
A
A
mΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PBSS302PD
40 V, 4 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
1
2
3
6
5
4
3
4
sym030
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS302PD
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
C9
Type number
PBSS302PD
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[2]
[3]
[4]
[1]
[2][5]
Conditions
open emitter
open base
open collector
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
Max
−40
−40
−5
−4
−15
−0.8
−2
360
600
750
1.1
2.5
Unit
V
V
V
A
A
A
A
mW
mW
mW
W
W
single pulse;
t
p
≤
1 ms
PBSS302PD_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 6 December 2007
2 of 14
NXP Semiconductors
PBSS302PD
40 V, 4 A PNP low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Operated under pulsed conditions: duty cycle
δ ≤
10 % and pulse width t
p
≤
10 ms.
1600
P
tot
(mW)
1200
(1)
006aaa270
800
(2)
(3)
400
(4)
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, mounting pad for collector 1 cm
2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS302PD_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 6 December 2007
3 of 14
NXP Semiconductors
PBSS302PD
40 V, 4 A PNP low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
[4]
[1][5]
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
350
208
167
113
50
45
Unit
K/W
K/W
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Operated under pulsed conditions: duty cycle
δ ≤
10 % and pulse width t
p
≤
10 ms.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
1
006aaa271
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302PD_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 6 December 2007
4 of 14
NXP Semiconductors
PBSS302PD
40 V, 4 A PNP low V
CEsat
(BISS) transistor
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
10
−1
10
−5
006aaa272
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
006aaa273
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302PD_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 6 December 2007
5 of 14
京公网安备 11010802033920号
EEWORLD
