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PBSS304PX

Description
60 V, 4.2 A PNP low VCEsat (BISS) transistor
CategoryDiscrete semiconductor    The transistor   
File Size196KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PBSS304PX Overview

60 V, 4.2 A PNP low VCEsat (BISS) transistor

PBSS304PX Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionPLASTIC, SC-62, TO-243, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4.2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)2.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Maximum off time (toff)320 ns
Maximum opening time (tons)80 ns
PBSS304PX
60 V, 4.2 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 8 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS304NX.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
1 ms
I
C
=
−4
A;
I
B
=
−200
mA
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
48
Max
−60
−4.2
−8.4
69
Unit
V
A
A
Pulse test: t
p
300
μs; δ ≤
0.02.

PBSS304PX Related Products

PBSS304PX PBSS304PX,115 PBSS304PX/DG,135
Description 60 V, 4.2 A PNP low VCEsat (BISS) transistor 4200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR 4200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
Parts packaging code SOT-89 SOT-89 SOT-89
Contacts 3 3 3
Reach Compliance Code compli compli unknow
package instruction PLASTIC, SC-62, TO-243, 3 PIN PLASTIC, SMD, SC-62, 3 PIN -
ECCN code EAR99 EAR99 -
Shell connection COLLECTOR COLLECTOR -
Maximum collector current (IC) 4.2 A 4.2 A -
Collector-emitter maximum voltage 60 V 60 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 60 200 -
JESD-30 code R-PSSO-F3 R-PSSO-F3 -
JESD-609 code e3 e3 -
Humidity sensitivity level 1 1 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED -
Polarity/channel type PNP PNP -
Maximum power dissipation(Abs) 2.1 W 2.1 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal surface Tin (Sn) Tin (Sn) -
Terminal form FLAT FLAT -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature 30 NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 130 MHz 130 MHz -
Maximum off time (toff) 320 ns 320 ns -
Maximum opening time (tons) 80 ns 80 ns -
Brand Name - NXP Semiconduc NXP Semiconduc
Manufacturer packaging code - SOT89 SOT89
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