DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS3515VS
15 V low V
CE(sat)
PNP double
transistor
Product data sheet
Supersedes data of 2001 Nov 07
2004 Dec 23
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
PNP double transistor
FEATURES
•
300 mW total power dissipation
•
Very small 1.6
×
1.2 mm ultra thin package
•
Self alignment during soldering due to straight leads
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved thermal behaviour due to flat leads
•
Replaces two SC75/SC89 packaged low V
CEsat
transistors on same PCB area
•
Reduces required PCB area
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and muting
•
Low frequency driver circuits
•
LCD backlighting
•
Audio frequency general purpose amplifier applications
•
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
5
4
PBSS3515VS
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R
CEsat
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
PARAMETER
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX.
−15
−1
<500
UNIT
V
A
mΩ
6
5
4
TR2
TR1
DESCRIPTION
PNP low V
CEsat
double transistor in a SOT666 plastic
package.
NPN complement: PBSS2515VS.
MARKING
TYPE NUMBER
PBSS3515VS
ORDERING INFORMATION
TYPE NUMBER
PBSS3515VS
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 6 leads
VERSION
SOT666
35
MARKING CODE
Fig.1
Simplified outline (SOT666) and symbol.
1
Top view
2
3
MAM450
1
2
3
2004 Dec 23
2
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
PNP double transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MIN.
PBSS3515VS
MAX.
−15
−15
−6
−500
−1
−100
200
+150
150
+150
UNIT
Per transistor unless otherwise specified
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
VALUE
416
UNIT
K/W
total power dissipation
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
V
V
V
mA
A
mA
mW
°C
°C
°C
2004 Dec 23
3
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
PNP double transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
CB
=
−15
V; I
E
= 0 A
V
CB
=
−15
V; I
E
= 0 A; T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−2
V; I
C
=
−10
mA
V
CE
=
−2
V; I
C
=
−100
mA; note 1
V
CE
=
−2
V; I
C
=
−500
mA; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−200
mA; I
B
=
−10
mA
I
C
=
−500
mA; I
B
=
−50
mA; note 1
R
CEsat
V
BEsat
V
BE
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
V
CE
=
−2
V; I
C
=
−100
mA; note 1
I
C
=
−100
mA; V
CE
=
−5
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0 A; f = 1 MHz
MIN.
−
−
−
200
150
90
−
−
−
−
−
−
100
−
PBSS3515VS
TYP.
−
−
−
−
−
−
−
−
−
300
−
−
280
−
MAX.
−100
−50
−100
−
−
−
−25
−150
−250
<500
−1.1
−0.9
−
10
UNIT
Per transistor unless otherwise specified
I
CBO
collector-base cut-off current
nA
μA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
2004 Dec 23
4
NXP Semiconductors
Product data sheet
15 V low V
CE(sat)
PNP double transistor
PBSS3515VS
handbook, halfpage
600
MLD649
−1200
handbook, halfpage
VBE
(mV)
−1000
(1)
MLD651
hFE
(1)
400
−800
(2)
(2)
−600
200
(3)
(3)
−400
0
−10
−1
−1
−10
−10
3
−10
2
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
V
CE
=
−2
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−2
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
3
handbook, halfpage
VCEsat
(mV)
−10
2
(2)
(1)
MLD653
handbook, halfpage
−1200
MLD652
VBEsat
(mV)
−1000
(1)
−800
(2)
−10
(3)
−600
(3)
−400
−1
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Dec 23
5
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