DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4350T
50 V; 3 A NPN low V
CEsat
(BISS) transistor
Product data sheet
Supersedes data of 2002 Aug 08
2004 Jan 09
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low V
CEsat
(BISS) transistor
FEATURES
•
Low collector-emitter saturation voltage V
CEsat
and
corresponding low R
CEsat
•
High collector current capability
•
High collector current gain
•
Improved efficiency due to reduced heat generation.
APPLICATIONS
•
Power management applications
•
Low and medium power DC/DC convertors
•
Supply line switching
•
Battery chargers
•
Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5350T.
MARKING
TYPE NUMBER
PBSS4350T
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4350T
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
ZC*
Top view
handbook, halfpage
PBSS4350T
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
MAX.
50
2
3
130
UNIT
V
A
A
mΩ
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 09
2
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low V
CEsat
(BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
total power dissipation
T
amb
≤
25
°C;
note 2
T
amb
≤
25
°C;
note 3
T
amb
≤
25
°C;
note 4
T
amb
≤
25
°C;
notes 1 and 2
T
stg
T
j
T
amb
Notes
1. Operated under pulsed conditions: pulse width t
p
≤
100 ms; duty cycle
δ ≤
0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
storage temperature
junction temperature
operating ambient temperature
note 1
single peak
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS4350T
MAX.
50
50
5
2
3
5
0.5
300
480
540
1.2
+150
150
+150
V
V
V
A
A
A
A
UNIT
mW
mW
mW
W
°C
°C
°C
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
in free air; note 3
in free air; notes 1 and 4
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
4. Operated under pulsed conditions: pulse width t
p
≤
100 ms; duty cycle
δ ≤
0.25.
VALUE
417
260
230
104
UNIT
K/W
K/W
K/W
K/W
2004 Jan 09
3
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low V
CEsat
(BISS) transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
CONDITIONS
−
−
−
300
300
300
200
100
−
−
−
−
−
−
−
−
1.2
100
−
I
E
= 0; V
CB
= 50 V; T
j
= 150
°C
emitter-base cut-off current
DC current gain
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
I
C
= 1 A; V
CE
= 2 V; note 1
I
C
= 2 A; V
CE
= 2 V; note 1
I
C
= 3 A; V
CE
= 2 V; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 50 mA
I
C
= 2 A; I
B
= 100 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 3 A; I
B
= 300 mA; note 1
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 2 A; I
B
= 100 mA; note 1
I
C
= 3 A; I
B
= 300 mA; note 1
I
C
= 1 A; V
CE
= 2 V; note 1
I
C
= 100 mA; V
CE
= 5 V;
f = 100 MHz
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
100
−
−
−
−
−
TYP.
PBSS4350T
MAX.
100
50
100
−
−
−
−
−
80
160
280
260
370
130
1.1
1.2
−
−
25
UNIT
nA
μA
nA
collector-base cut-off current I
E
= 0; V
CB
= 50 V
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
pF
2004 Jan 09
4
NXP Semiconductors
Product data sheet
50 V; 3 A NPN low V
CEsat
(BISS) transistor
PBSS4350T
handbook, halfpage
1000
MLD867
handbook, halfpage
1200
MLD868
hFE
800
(1)
VBE
(mV)
(1)
800
(2)
600
(2)
400
400
200
(3)
(3)
0
10
−1
1
10
10
2
10
3
10
4
IC (mA)
0
10
−1
1
10
10
2
10
3
10
4
IC (mA)
V
CE
= 2 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 2 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
handbook, halfpage
1300
MLD869
handbook, halfpage
1300
MLD870
VBEsat
(mV)
900
(1)
(2)
VBEsat
(mV)
900
(1)
(2)
(3)
(3)
500
500
100
10
−1
1
10
10
2
10
3
10
4
IC (mA)
100
10
−1
1
10
10
2
10
3
10
4
IC (mA)
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
I
C
/I
B
= 20.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 09
5
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