DISCRETE SEMICONDUCTORS
DATA SHEET
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MBD128
PBSS5320D
20 V low V
CEsat
PNP transistor
Product data sheet
2002 Jun 12
NXP Semiconductors
Product data sheet
20 V low V
CEsat
PNP transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation
APPLICATIONS
•
Supply line switching circuits
•
Battery management applications
•
DC/DC converter applications
•
Strobe flash units
•
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT457 (SC-74) plastic
package.
MARKING
TYPE NUMBER
PBSS5320D
52
MARKING CODE
6
5
4
PBSS5320D
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
4
5
6
collector
collector
base
emitter
collector
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX.
−20
−3
−5
133
UNIT
V
A
A
mΩ
1, 2, 5, 6
3
4
1
Top view
2
3
MAM466
Fig.1
Simplified outline (SOT457; SC-74) and
symbol.
2002 Jun 12
2
NXP Semiconductors
Product data sheet
20 V low V
CEsat
PNP transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5320D
MAX.
−20
−20
−5
−3
−5
−500
600
750
+150
150
+150
V
V
V
A
A
UNIT
mA
mW
mW
°C
°C
°C
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to
ambient
note 1
note 2
CONDITIONS
VALUE
208
160
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm
2
.
2002 Jun 12
3
NXP Semiconductors
Product data sheet
20 V low V
CEsat
PNP transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
CONDITIONS
−
−
−
200
200
200
150
−
−
−
−
−
−
−
−
−1.2
−
100
V
CB
=
−20
V; I
E
= 0; T
j
= 150
°C
emitter-base cut-off current
DC current gain
V
EB
=
−5
V; I
C
= 0
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CE
=
−2
V; I
C
=
−1
000 mA; note 1
V
CE
=
−2
V; I
C
=
−2
000 mA; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
=
−500
mA; I
B
=
−5
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−50
mA
I
C
=
−2
A; I
B
=
−20
mA; note 1
I
C
=
−2
A; I
B
=
−200
mA; note 1
I
C
=
−3
A; I
B
=
−300
mA; note 1
R
CEsat
V
BEsat
V
BEon
C
c
F
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
collector capacitance
transition frequency
I
C
=
−3
A; I
B
=
−300
mA; note 1
I
C
=
−2
A; I
B
=
−200
mA; note 1
V
CE
=
−2
V; I
C
=
−1
A; note 1
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
I
C
=
−200
mA; V
CE
=
−10
V;
f = 100 MHz
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
85
−
−
−
−
MIN.
PBSS5320D
MAX.
−100
−50
−100
−
−
−
−
−130
−80
−160
−400
−250
−400
133
−1.2
−
50
−
UNIT
nA
μA
nA
collector-base cut-off current V
CB
=
−20
V; I
E
= 0
mV
mV
mV
mV
mV
mV
mΩ
V
V
pF
MHz
2002 Jun 12
4
NXP Semiconductors
Product data sheet
20 V low V
CEsat
PNP transistor
PACKAGE OUTLINE
PBSS5320D
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
HE
v
M
A
6
5
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
e
bp
w
M
B
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A1
0.1
0.013
bp
0.40
0.25
c
0.26
0.10
D
3.1
2.7
E
1.7
1.3
e
0.95
HE
3.0
2.5
Lp
0.6
0.2
Q
0.33
0.23
v
0.2
w
0.2
y
0.1
OUTLINE
VERSION
SOT457
REFERENCES
IEC
JEDEC
EIAJ
SC-74
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
2002 Jun 12
5
Embedded System
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