DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5320T
20 V, 3 A
PNP low V
CEsat
(BISS) transistor
Product data sheet
Supersedes data of 2002 Aug 08
2004 Jan 15
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low V
CEsat
(BISS) transistor
FEATURES
•
Low collector-emitter saturation voltage V
CEsat
and
corresponding low R
CEsat
•
High collector current capability
•
High collector current gain
•
Improved efficiency due to reduced heat generation.
APPLICATIONS
•
Power management applications
•
Low and medium power DC/DC convertors
•
Supply line switching
•
Battery chargers
•
Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT23 plastic package.
NPN complement: PBSS4320T.
MARKING
TYPE NUMBER
PBSS5320T
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS5320T
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
ZH∗
Top view
handbook, halfpage
PBSS5320T
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
MAX.
−20
−2
−3
105
UNIT
V
A
A
mΩ
3
3
1
2
1
2
MAM256
Fig.1
Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 15
2
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low V
CEsat
(BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
total power dissipation
T
amb
≤
25
°C;
note 2
T
amb
≤
25
°C;
note 3
T
amb
≤
25
°C;
note 4
T
amb
≤
25
°C;
notes 1 and 2
T
stg
T
j
T
amb
Notes
1. Operated under pulsed conditions: pulse width t
p
≤
100 ms; duty cycle
δ ≤
0.25.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
storage temperature
junction temperature
operating ambient temperature
note 1
single peak
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS5320T
MAX.
−20
−20
−5
−2
−3
−5
−0.5
300
480
540
1.2
+150
150
+150
V
V
V
A
A
A
A
UNIT
mW
mW
mW
W
°C
°C
°C
3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm
2
.
4. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
in free air; note 3
in free air; notes 1 and 4
Notes
1. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm
2
.
4. Operated under pulsed conditions: pulse width t
p
≤
100 ms; duty cycle
δ ≤
0.25.
VALUE
417
260
230
104
UNIT
K/W
K/W
K/W
K/W
2004 Jan 15
3
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low V
CEsat
(BISS) transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
CONDITIONS
−
−
−
220
220
200
150
100
−
−
−
−
−
−
−
−
−1.2
100
−
V
CB
=
−20
V; I
E
= 0; T
j
= 150
°C
emitter-base cut-off current
DC current gain
V
EB
=
−5
V; I
C
= 0
V
CE
=
−2
V; I
C
=
−100
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CE
=
−2
V; I
C
=
−1
A; note 1
V
CE
=
−2
V; I
C
=
−2
A; note 1
V
CE
=
−2
V; I
C
=
−3
A; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−1
A; I
B
=
−50
mA
I
C
=
−2
A; I
B
=
−100
mA; note 1
I
C
=
−2
A; I
B
=
−200
mA; note 1
I
C
=
−3
A; I
B
=
−300
mA; note 1
R
CEsat
V
BEsat
V
BE(on)
f
T
C
c
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
=
−2
A; I
B
=
−200
mA; note 1
I
C
=
−2
A; I
B
=
−100
mA; note 1
I
C
=
−3
A; I
B
=
−300
mA; note 1
V
CE
=
−2
V; I
C
=
−1
A; note 1
I
C
=
−100
mA; V
CE
=
−5
V;
f = 100 MHz
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
75
−
−
−
−
−
TYP.
PBSS5320T
MAX.
−100
−50
−100
−
−
−
−
−
−70
−130
−230
−210
−300
105
−1.1
−1.2
−
−
50
UNIT
nA
μA
nA
collector-base cut-off current V
CB
=
−20
V; I
E
= 0
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
pF
2004 Jan 15
4
NXP Semiconductors
Product data sheet
20 V, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5320T
handbook, halfpage
1000
MLD876
handbook, halfpage
−1200
VBE
(mV)
MLD877
hFE
800
(1)
(1)
−800
600
(2)
(2)
400
−400
(3)
(3)
200
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
0
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
V
CE
=
−2
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−2
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
handbook, halfpage
−1400
MLD878
handbook, halfpage
−1400
MLD879
VBEsat
(mV)
−1000
(1)
(2)
VBEsat
(mV)
−1000
(1)
(2)
−600
(3)
−600
(3)
−200
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
−10
4
IC (mA)
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
I
C
/I
B
= 20.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
5
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