PBSS8110T datasheet, PDF - EEWORLD Datasheet

PBSS8110T: Description1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size125KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBSS8110T Overview

1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC, TO-236AB, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.48 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D088

PBSS8110T

100 V, 1 A

NPN low V

CEsat

(BISS) transistor

Product data sheet

Supersedes data of 2003 Jul 28

2003 Dec 22

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