PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 03 — 22 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
single pulse;
t
p
≤
1 ms
I
C
=
−1
A;
I
B
=
−100
mA
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
170
Max
−100
−1
−3
320
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Pinning
Description
collector
base
emitter
1
2
3
6
5
4
3
4
sym030
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS9110D
SC-74
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking codes
Marking code
A7
Type number
PBSS9110D
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
T
amb
≤
25
°C
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
Min
-
-
-
-
-
-
-
-
-
Max
−120
−100
−5
−1
−3
−0.3
300
550
700
Unit
V
V
V
A
A
A
mW
mW
mW
PBSS9110D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 November 2009
2 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm
2
.
800
P
tot
(mW)
600
(1)
001aaa493
400
(2)
200
(3)
0
0
40
80
120
160
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 6cm
2
(2) FR4 PCB, mounting pad for collector 1cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
416
227
178
83
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm
2
.
PBSS9110D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 November 2009
3 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
10
3
Z
th(j-a)
(K/W)
10
2
001aaa818
duty cycle =
1
0.5
0.33
0.2
0.1
0.05
0.75
10
0.02
0.01
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
001aaa819
duty cycle =
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0.75
10
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1cm
2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS9110D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 November 2009
4 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
=
−80
V; I
E
= 0 A
V
CB
=
−80
V; I
E
= 0 A;
T
j
= 150
°C
V
CE
=
−80
V;
V
BE
= 0 V
V
EB
=
−4
V; I
C
= 0 A
V
CE
=
−5
V;
I
C
=
−1
mA
V
CE
=
−5
V;
I
C
=
−250
mA
V
CE
=
−5
V;
I
C
=
−0.5
A
V
CE
=
−5
V; I
C
=
−1
A
V
CEsat
collector-emitter
saturation voltage
I
C
=
−250
mA;
I
B
=
−25
mA
I
C
=
−0.5
A;
I
B
=
−50
mA
I
C
=
−1
A;
I
B
=
−100
mA
R
CEsat
V
BEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
V
CE
=
−10
V;
I
C
=
−50
mA;
f = 100 MHz
V
CB
=
−10
V;
I
E
= i
e
= 0 A;
f = 1 MHz
I
C
=
−1
A;
I
B
=
−100
mA
I
C
=
−1
A;
I
B
=
−100
mA
V
CE
=
−5
V; I
C
=
−1
A
V
CC
=
−10
V;
I
C
=
−0.5
A;
I
Bon
=
−0.025
A;
I
Boff
= 0.025 A
[1]
[1]
Min
-
-
-
-
150
150
150
125
-
-
-
-
-
-
-
-
-
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
170
-
-
20
60
80
290
120
410
-
Max
−100
−50
−100
−100
-
-
450
-
−120
−180
−320
320
−1.1
−1.0
-
-
-
-
-
-
-
Unit
nA
μA
nA
nA
I
CES
I
EBO
h
FE
[1]
mV
mV
mV
mΩ
V
V
ns
ns
ns
ns
ns
ns
MHz
[1]
[1]
[1]
C
c
collector capacitance
-
-
17
pF
[1]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
PBSS9110D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 November 2009
5 of 13
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