SPP80N06S2L-H5
SPB80N06S2L-H5
OptiMOS
®
Power-Transistor
Feature
•
N-Channel
Product Summary
V
DS
R
DS(on)
I
D
P- TO263 -3-2
55
5
80
P- TO220 -3-1
V
mΩ
A
•
Enhancement mode
•
175°C operating temperature
•
dv/dt rated
Type
SPP80N06S2L-H5
SPB80N06S2L-H5
Package
P- TO220 -3-1
P- TO263 -3-2
Ordering Code
Q67060-S6054
Q67060-S6055
Marking
2N06LH5
2N06LH5
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
1)
T
C
=25°C
Value
80
80
Unit
A
I
D
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
320
700
6
±20
300
-55... +175
55/175/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
I
D
=80 A ,
V
DD
=25V,
R
GS
=25Ω
Reverse diode dv/dt
I
S
=80A,
V
DS
=44V,
di/dt=200A/µs,
T
jmax
=175°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPP80N06S2L-H5
SPB80N06S2L-H5
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
0.34
-
-
-
max.
0.5
62
62
40
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
55
1.2
Values
typ.
-
1.6
max.
-
2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=230µA
Zero gate voltage drain current
V
DS
=55V,
V
GS
=0V,
T
j
=25°C
V
DS
=55V,
V
GS
=0V,
T
j
=125°C
µA
0.01
1
1
5
4
1
100
100
6.5
5
nA
mΩ
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=80A
Drain-source on-state resistance
V
GS
=10V,
I
D
=80A
1Current limited by bondwire ; with an
R
thJC
= 0.5K/W the chip is able to carry
I
D
= 170A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-09
SPP80N06S2L-H5
SPB80N06S2L-H5
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=44V,
I
D
=80A,
V
GS
=0 to 10V
V
DD
=44V,
I
D
=80A
Symbol
Conditions
min.
Values
typ.
157
4996
1063
276
19
23
75
22
max.
-
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=80A
V
GS
=0V,
V
DS
=25V,
f=1MHz
79
-
-
-
-
-
-
-
S
6640 pF
1410
410
28
35
110
33
ns
V
DD
=30V,
V
GS
=10V,
I
D
=80A,
R
G
=1.2Ω
-
-
-
-
14
53
145
3
18
80
190
-
nC
V
(plateau)
V
DD
=44V,
I
D
=80A
V
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=80A
V
R
=30V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
C
=25°C
-
-
-
-
-
-
-
0.9
76
169
80
320
1.3
95
210
A
V
ns
nC
Page 3
2003-05-09
SPP80N06S2L-H5
SPB80N06S2L-H5
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
190
SPP80N06S2L-H5
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
16
SPP80N06S2L-H5
P
tot
= 300W
h
i
g
f
e
V
GS [V]
a
b
3.0
3.2
3.5
3.8
4.0
4.2
5.0
6.0
7.0
A
160
140
d
e
f
m
Ω
c
d
I
D
120
100
80
c
d
e
f
g
h
i
R
DS(on)
12
10
8
g
6
h
60
4
40
20
0
0
1
2
3
4
b
i
2
V
GS
[V] =
a
d
3.8
e
4.0
f
4.2
g
5.0
h
6.0
i
7.0
V
0
5.5
0
20
40
60
80
100 120 140
A
180
V
DS
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
160
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
200
A
S
160
120
140
100
g
fs
V
V
GS
Page 5
I
D
120
100
80
60
80
60
40
40
20
20
0
4
0
20
40
60
80
100
120
0
0
1
2
A
I
D
160
2003-05-09
Automotive Electronics
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