ZXGD3103N8
SYNCHRONOUS MOSFET CONTROLLER
Description
The ZXGD3103 is intended to drive MOSFETS configured as ideal
diode replacements. The device is comprised of a differential amplifier
detector stage and high current driver. The detector monitors the
reverse voltage of the MOSFET such that if body diode conduction
occurs a positive voltage is applied to the MOSFET’s Gate pin.
Once the positive voltage is applied to the Gate the MOSFET
switches on allowing reverse current flow. The detectors’ output
voltage is then proportional to the MOSFET Drain-Source reverse
voltage drop and this is applied to the Gate via the driver. This action
provides a rapid turn off as current decays.
Features
5 to15V V
CC
Range
Operation Up to 250kHz
180V Drain Voltage Rating
Proportional Gate Drive to Minimize Body Diode Conduction
Turn-off Propagation Delay 15ns and Turn-off Time 20ns
Detector Threshold Voltage ~10mV
Standby Current 5mA
Suitable for Discontinuous Mode (DCM), Critical Conduction
Mode (CrCM) and Continuous Mode (CCM) Operation
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Flyback Converters in:
Low Voltage AC/DC Adaptors
LED TV, Monitors, Set Top Boxes
Resonant Converters in:
Higher Power PSU - Telecoms and Server PSU
Computing Power Supplies – ATX and Server PSU
Street Lighting
Mechanical Data
Case: SO-8
Case material: Molded Plastic. ―Green‖ Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
-
Typical configuration
Transformer
SO-8
DNC
REF
DRAIN
BIAS
GND
V
CC
R
REF
R
BIAS
GATEL
BIAS
Vcc
REF
DRAIN
GATEH
C1
ZXGD
3103
GATEL GATEH GND
Pin Name
GND
V
CC
GATEL
GATEH
BIAS
DRAIN
REF
DNC
Pin Function
Ground
Power Supply
Gate Turn off
Gate Turn on
Bias connection
Drain Sense
Reference
Do not connect
Top View
Synchronous Rectifier
MOSFET
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXGD3103N8TC
Notes:
Marking
ZXGD3103
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXGD
3103
YY
WW
= Product Type Marking Code, Line 1
= Product Type Marking Code, Line 2
= Year (ex: 16 = 2016)
= Week (01 to 53)
June 2016
© Diodes Incorporated
ZXGD
3103
YY WW
ZXGD3103N8
Document number:
DS32255
Rev. 3 - 2
1 of 12
www.diodes.com
ZXGD3103N8
Functional Block Diagram
Vcc
Gate drive
amplitude
control
+
Differential
- amplifier
DRAIN
+
High volt
- comparator
Turn-on/off
control
GATEH
Driver
GATEL
Threshold
voltage
control
REF
BIAS
GND
Pin Functions
Pin Number
1
2
3
4
5
6
7
8
Pin Name
DNC
REF
GATEL
GATEH
Vcc
GND
BIAS
DRAIN
Pin Function and Description
Do not connect
Leave pin floating
Reference
This pin is connected to V
CC
via resistor, R
REF
Gate turn off
This pin sinks current, I
SINK
, from the synchronous MOSFET Gate
Gate turn on
This pin sources current, I
SOURCE
, to the synchronous MOSFET Gate
Power Supply
This is the supply pin. It is recommended to decouple this point to ground closely with a ceramic capacitor.
Ground
This is the Ground reference point. Connect to the synchronous MOSFET Source terminal.
Bias
This pin is connected to V
CC
via resistor R
BIAS
Drain Connection
Connect this pin to the synchronous MOSFET drain terminal.
ZXGD3103N8
Document number:
DS32255
Rev. 3 - 2
2 of 12
www.diodes.com
June 2016
© Diodes Incorporated
ZXGD3103N8
Absolute Maximum Ratings
(Voltage relative to GND, @ T
A
= +25° unless otherwise specified.)
C,
Characteristic
Supply Voltage
Continuous Drain Pin Voltage
GATEH and GATEL Output Voltage
Gate Driver Peak Source Current
Gate Driver Peak Sink Current
Reference Current
Bias Voltage
Bias Current
Symbol
V
CC
V
D
V
G
I
SOURCE
I
SINK
I
REF
V
BIAS
I
BIAS
Value
15
-3 to 180
-3 to V
CC
+ 3
2.5
6
25
V
CC
100
Unit
V
V
V
A
A
mA
V
mA
Thermal Characteristics
(@ T
A
= +25° unless otherwise specified.)
C,
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
490
3.92
655
5.24
720
5.76
785
6.28
255
191
173
159
135
-40 to +150
-55 to +150
Unit
mW
mW/°
C
Thermal Resistance, Junction to Ambient
R
θJA
R
θJL
T
J
T
STG
°
C/W
Thermal Resistance, Junction to Lead
Operating Temperature Range
Storage Temperature Range
°
C/W
°
C
°
C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
2,000
300
Unit
V
V
JEDEC Class
2
B
5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as Note 5, except pin 5 (Vcc) and pins 6 (PGND) are both connected to separate 5mm x 5mm 1oz copper heat-sinks.
7. Same as Note 6, except both heat-sinks are 10mm x 10mm.
8. Same as Note 6, except both heat-sinks are 15mm x 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on pin 6 (GND) and pin 5 (V
CC
).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A11.
ZXGD3103N8
Document number:
DS32255
Rev. 3 - 2
3 of 12
www.diodes.com
June 2016
© Diodes Incorporated
ZXGD3103N8
Thermal Derating Curve
Max Power Dissipation (W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
O
15mm x 15mm
10mm x 10mm
5mm x 5mm
Minimum
Layout
Junction Temperature ( C)
Derating Curve
Electrical Characteristics
Characteristic
Input Supply
Operating Current
Gate Driver
Turn-off Threshold Voltage
(@ V
CC
= 10V, T
A
= +25° R
BIAS
= 3.3kΩ
,
R
REF
= 4.3kΩ
,
unless otherwise specified.)
C,
Symbol
I
OP
V
T
V
G(OFF)
V
G
V
G
V
G
V
G
t
D1
t
R
t
D2
t
F
t
F
Min
—
—
-16
—
6
8.8
9.2
9.3
—
—
—
—
—
Typ
2.16
5.16
-10
0.73
7.2
9.2
9.4
9.5
150
450
15
21
17
Max
—
—
0
1
—
—
—
—
—
—
—
—
—
ns
Refer to application test circuit below
Unit
mA
mA
mV
V
D
≤ -200mV
V
D
≥ 0mV
V
G
=1V, R
H
= 100kΩ, R
L
= o/c
V
D
≥ 0mV, R
H
= 100kΩ, R
L
= o/c
V
D
= -50mV, R
H
= o/c, R
L
= 100kΩ
V
D
= -100mV, R
H
= o/c, R
L
= 100kΩ
V
D
≤ -150mV, R
H
= o/c, R
L
= 100kΩ
V
D
≤ -200mV, R
H
= o/c, R
L
= 100kΩ
Test Condition
Gate Output Voltage
V
Switching Performance
Turn-On Propagation Delay
Gate Rise Time
Turn-Off Propagation Delay
Gate Fall Time, Continuous Conduction
Mode
Gate Fall Time, Discontinuous Conduction
Mode
Flyback Transformer:
Magnetising Inductance = 820μH
Output Load = 12V, 30W
Vcc = 10V
R
REF
4.3K
Ω
R
BIAS
3.3K
Ω
Test Conditions:
Primary Side Input Voltage = 110V
Primary MOSFET Switching
Frequency = 100kHz
Continuous Conduction Mode
REF
DRAIN
BIAS
Vcc
C1
1μF
ZXGD
3103
GATEL GATEH GND
V
G
V
D
150V MOSFET:
Q
g(TOT)
= 82nC, R
DS(ON)
= 15mΩ
ZXGD3103N8
Document number:
DS32255
Rev. 3 - 2
4 of 12
www.diodes.com
June 2016
© Diodes Incorporated
ZXGD3103N8
Typical Electrical Characteristics
(@ T
A
= +25° unless otherwise specified.)
C,
14
10
V
G
Gate Voltage (V)
V
G
Gate Voltage (V)
12
10
8
6
4
2
0
-100
See Resistor Table for Values
V
CC
= 15V
V
CC
= 12V
V
CC
= 10V
V
CC
= 5V
8
6
4
2
V
CC
= 10V
R
BIAS
=3K3
R
REF
=4K3
100k pull down
T
T
T
T
= -40 C
O
= 25 C
O
= 85 C
O
= 125 C
O
-80
V
D
Drain Voltage (mV)
-60
-40
-20
0
0
-100
-80
-60
-40
-20
0
V
D
Drain Voltage (mV)
Transfer Characteristic
5
100
Transfer Characteristic
V
D
Drain Voltage (mV)
0
-5
-10
-15
-20
-25
-50
Supply Current (mA)
V
CC
= 10V
R
BIAS
=3K3
R
REF
=4K3
V
G
= 1V
100k pull up
V
CC
= 10V
R
BIAS
=3k3
R
REF
=4K3
D = 0.5
C
LOAD
=22nF
C
LOAD
=10nF
C
LOAD
=4.7nF
C
LOAD
=2.2nF
C
LOAD
=1nF
10
-25
0
25
50
75
O
100 125 150
1k
10k
100k
Temperature ( C)
Frequency (Hz)
Drain Sense Voltage vs Temperature
100
1
R
BIAS
=3k3
Supply Current vs Frequency
Supply Current (mA)
Peak Current (A)
80
60
40
R
REF
=4K3
D = 0.5
f=250kHz
V
CC
= 15V
V
CC
= 12V
0
-1
-2
-3
-4
-5
0
Current flow Gate to Ground
Current flow Supply to Gate
V
CC
= 10V
R
BIAS
=3K3
R
REF
=4K3
T = 25 C
O
V
CC
= 10V
20
V
CC
= 5V
0
0
2
4
6
8
10 12 14 16 18 20 22
5
10
15
20
25
Capacitance (nF)
Capacitance (nF)
Supply Current vs Capacitive Load
Gate Current vs Capacitive Load
ZXGD3103N8
Document number:
DS32255
Rev. 3 - 2
5 of 12
www.diodes.com
June 2016
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
