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PH2525L

Description
N-channel TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size88KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PH2525L Overview

N-channel TrenchMOS logic level FET

PH2525L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionPLASTIC, LFPAK-4
Contacts235
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)320 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0039 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)62.5 W
Maximum pulsed drain current (IDM)300 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PH2525L
N-channel TrenchMOS logic level FET
Rev. 02 — 5 December 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I
Logic level threshold
I
Optimized for use in DC-to-DC
converters
I
100 % R
G
tested
I
Lead-free package
I
Very low switching and conduction
losses
1.3 Applications
I
DC-to-DC converters
I
Voltage regulators
I
Switched-mode power supplies
I
PC Motherboards
1.4 Quick reference data
I
V
DS
25 V
I
R
DSon
2.5 mΩ
I
I
D
100 A
I
Q
GD
= 6.8 nC (typ)
2. Pinning information
Table 1.
Pin
1, 2, 3
4
mb
Pinning
Description
source (S)
gate (G)
mounting base; connected to drain (D)
mb
D
Simplified outline
Symbol
G
mbb076
S
1 2 3 4
SOT669 (LFPAK)
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