PJ2N9013
NPN Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLAS S B PUS H-PULL OPERATION
•
•
•
•
High total power dissipation(PT=625mW)
High collector Current (Ic=500mA)
Complementary to PJ2N9012
Excellent h
EF
Linearity
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS
(Ta= 25
°
C
)
Rating
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
Ic
Pc
Tj
Tstg
Value
40
20
5
500
625
150
-55 ~150
Uint
V
V
V
A
W
°C
°C
P in : 1. Emitter
2. Base
3. Collector
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJ2N9013CT
PJ2N9013CX
Operating Temperature
-20℃½+85℃
Package
TO-92
SOT-23
ELECTRICAL CHARACTERISTICS
(Ta= 25
°
C
)
Characte ristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
V
BE(ON)
Te st Conditions
I
C
= 100µA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
=100µA , I
C
=0
V
CB
= 25V , I
E
= 0
V
EB
= 3V , I
C
=0
V
EB
= 1V, I
C
=50mA
V
EB
= 1V, I
C
=500mA
I
C
= 500 mA , I
B
=50mA
I
C
= 500mA , I
B
=50mA
V
CE
=1V, Ic =10mA
Min
40
20
5
Typ
Max
Unit
V
V
V
100
100
64
40
120
90
0.16
0.91
0.6
0.67
0.6
1.2
0.7
202
nA
nA
V
V
V
h
EF
CLASSIFICATION
Classification
h
EF
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
1-3
2002/01.rev.A
PJ2N9013
NPN Epitaxial Silicon Transistor
STATIC CHARACTERISTIC
DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
CURRENT GAIN-BANDWIDTH PRODUCT
2-3
2002/01.rev.A
MCU
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