LinearL2
TM
Power MOSFET
w/Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
IXTK60N50L2
IXTX60N50L2
V
DSS
I
D25
R
DS(on)
= 500V
= 60A
< 100m
TO-264 (IXTK)
G
D
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, pulse width limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
Maximum Ratings
500
500
30
40
60
150
60
3
960
-55...+150
150
-55...+150
V
V
V
V
A
A
A
J
W
C
C
C
°C
°C
Nm/lb.in
N/lb
g
g
G
D
S
Tab
PLUS247 (IXTX)
Tab
D = Drain
Tab = Drain
G = Gate
S = Source
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting torque (IXTK)
Mounting Force (IXTX)
TO-264
PLUS247
300
260
1.13/10
20..120 / 4.5..27
10
6
Features
Designed for linear operation
International standard packages
Avalanche rated
Guaranteed FBSOA at 75C
Symbol
Test Conditions
(T
J
= 25C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min. Typ. Max.
500
2.5
4.5
200
V
V
nA
Advantages
Easy to mount
Space savings
High power density
Applications
50
A
5
mA
100
m
Solid state circuit breakers
Soft start controls
Linear amplifiers
Programmable loads
Current regulators
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2015 IXYS CORPORATION, All Rights Reserved.
DS100087A(5/15)
IXTK60N50L2
IXTX60N50L2
Symbol
Test Conditions
(T
J
= 25C, unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 0.5
(External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
18
25
24
1325
172
40
40
165
38
610
130
365
32
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.13
C/W
C/W
Terminals:
1 - Gate
2,4 - Drain
3 - Source
TO-264 (IXTK) Outline
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V
DS
= 400V, I
D
= 1.1A, T
C
= 75C, tp = 3s
Characteristic Values
Min.
Typ.
Max.
440
W
PLUS 247
TM
(IXTX) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, unless otherwise specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 60A, -di/dt = 100A/s,
V
R
= 100V, V
GS
= 0V
980
73
35.8
Characteristic Values
Min.
Typ.
Max.
60
240
1.5
A
A
V
ns
A
μC
Terminals: 1 - Gate
2 - Drain
3 - Source
Notes: 1. Pulse test, t
300s, duty cycle, d
2%.
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
7,157,338B2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXTK60N50L2
IXTX60N50L2
Fig. 1. Output Characteristics @ T
J
= 25ºC
60
V
GS
= 20V
14V
12V
10V
160
140
9V
120
V
GS
= 20V
14V
12V
10V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
50
I
D
- Amperes
I
D
- Amperes
40
8V
30
100
9V
80
60
8V
40
20
7V
10
6V
5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
7V
20
0
0
5
10
6V
15
20
25
30
0
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
60
V
GS
= 20V
12V
10V
9V
8V
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 30A Value vs.
Junction Temperature
V
GS
= 10V
2.4
50
I
D
- Amperes
40
R
DS(on)
- Normalized
2.0
I
D
= 60A
30
7V
1.6
I
D
= 30A
20
6V
10
5V
0
0
1
2
3
4
5
6
7
8
9
10
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 30A Value vs.
Drain Current
2.8
V
GS
= 10V
20V
2.4
60
T
J
= 125ºC
50
Fig. 6. Maximum Drain Current vs.
Case Temperature
----
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
2.0
40
30
1.6
20
1.2
10
0.8
0
20
40
60
80
100
120
140
160
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2015 IXYS CORPORATION, All Rights Reserved.
IXTK60N50L2
IXTX60N50L2
Fig. 7. Input Admittance
100
90
80
50
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
70
40
25ºC
125ºC
I
D
- Amperes
60
50
40
30
20
10
0
3.5
4.0
4.5
5.0
5.5
6.0
T
J
= 125ºC
25ºC
- 40ºC
30
20
10
0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
0
10
20
30
40
50
60
70
80
90
100
110
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
200
16
14
160
12
V
DS
= 250V
I
D
= 30A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
120
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
10
8
6
4
2
80
40
0
0
0
100
200
300
400
500
600
700
800
900
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1
Fig. 12. Maximum Transient Thermal Impedance
f
= 1 MHz
Capacitance - PicoFarads
Ciss
Coss
1,000
Z
(th)JC
- ºC / W
10,000
0.1
0.01
Crss
100
0
5
10
15
20
25
30
35
40
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK60N50L2
IXTX60N50L2
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
1000
1000
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
R
DS(on)
Limit
R
DS(on)
Limit
100
25µs
25µs
100
I
D
- A m p e re s
I
D
- A m p e re s
100µs
100µs
10
1ms
10ms
100ms
1
10
1ms
10ms
100ms
1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
DC
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
DC
0.1
10
100
1000
0.1
10
100
1000
V
DS
- Volts
V
DS
- Volts
© 2015 IXYS CORPORATION, All Rights Reserved.
IXYS REF: T_60N50L2(9R)12-08-08-B
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