PMBD914
Single high-speed switching diode
Rev. 06 — 11 February 2009
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
PMBD914
PMBD914/DG
[1]
/DG: halogen-free
Type number
[1]
JEDEC
TO-236AB
SOT23
1.2 Features
I
High switching speed: t
rr
≤
4 ns
I
Low leakage current
I
Repetitive peak reverse voltage:
V
RRM
≤
100 V
I
Low capacitance: C
d
≤
1.5 pF
I
Reverse voltage: V
R
≤
100 V
I
Small SMD plastic package
1.3 Applications
I
High-speed switching
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse voltage
reverse recovery time
[2]
Conditions
[1]
Min
-
-
-
Typ
-
-
-
Max
215
100
4
Unit
mA
V
ns
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
PMBD914
Single high-speed switching diode
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode
not connected
cathode
1
2
3
1
3
2
006aaa764
Simplified outline
Graphic symbol
3. Ordering information
Table 4.
Ordering information
Package
Name
PMBD914
PMBD914/DG
[1]
/DG: halogen-free
Type number
[1]
Description
plastic surface-mounted package; 3 leads
Version
SOT23
-
4. Marking
Table 5.
PMBD914
PMBD914/DG
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*5D
YB*
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
square wave
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
PMBD914_6
Conditions
Min
-
-
[1]
Max
100
100
215
500
Unit
V
V
mA
mA
-
-
[2]
-
-
-
4
1
0.5
A
A
A
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 11 February 2009
2 of 10
NXP Semiconductors
PMBD914
Single high-speed switching diode
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
j
T
stg
[1]
[2]
[3]
Parameter
total power dissipation
junction temperature
storage temperature
Conditions
T
amb
≤
25
°C
[1][3]
Min
-
-
−65
Max
250
150
+150
Unit
mW
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
= 25
°C
prior to surge.
Soldering point of cathode tab.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
R
th(j-t)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
500
330
Unit
K/W
K/W
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
715
855
1
1.25
25
1
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
PMBD914_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 11 February 2009
3 of 10
NXP Semiconductors
PMBD914
Single high-speed switching diode
300
I
F
(mA)
(1)
(2)
(3)
mbg382
10
2
I
FSM
(A)
10
mbg704
200
100
1
0
10
−1
0
1
V
F
(V)
2
1
10
10
2
10
3
t
p
(µs)
10
4
(1) T
amb
= 150
°C;
typical values
(2) T
amb
= 25
°C;
typical values
(3) T
amb
= 25
°C;
maximum values
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage
mga884
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg446
10
5
0.8
C
d
(pF)
I
R
(nA)
10
4
(1)
0.6
10
3
(2)
0.4
(3)
10
2
0.2
10
0
0
100
T
j
(
°C
)
200
0
4
8
12
V
R
(V)
16
(1) V
R
= 75 V; maximum values
(2) V
R
= 75 V; typical values
(3) V
R
= 25 V; typical values
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Reverse current as a function of junction
temperature
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
PMBD914_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 11 February 2009
4 of 10
NXP Semiconductors
PMBD914
Single high-speed switching diode
250
I
F
(mA)
200
msa562
150
100
50
0
0
50
100
150
200
T
amb
(°C)
FR4 PCB, standard footprint
Fig 5.
Forward current as a function of ambient temperature; derating curve
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Fig 6.
Reverse recovery time test circuit and waveforms
I
1 kΩ
450
Ω
I
90 %
V
R
S
= 50
Ω
D.U.T.
OSCILLOSCOPE
R
i
= 50
Ω
10 %
t
t
r
t
p
input signal
VFR
t
output signal
mga882
Fig 7.
Forward recovery voltage test circuit and waveforms
PMBD914_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 11 February 2009
5 of 10
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