PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
Rev. 02 — 13 May 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
PMBT3906YS SOT363
JEITA
SC-88
NPN/NPN
complement
PMBT3904YS
NPN/PNP
complement
Package
configuration
Type number
PMBT3946YPN very small
1.2 Features
I
General-purpose double transistor
I
Board-space reduction
I
AEC-Q101 qualified
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
=
−1
V;
I
C
=
−10
mA
Conditions
open base
Min
-
-
100
Typ
-
-
180
Max
−40
−200
300
Unit
V
mA
Per transistor
NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
1
2
sym018
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
3
3. Ordering information
Table 4.
Ordering information
Package
Name
PMBT3906YS
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
BD*
Type number
PMBT3906YS
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBT3906YS_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 13 May 2009
2 of 12
NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
-
−55
−65
Max
−40
−40
−6
−200
−200
−100
230
350
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
mW
°C
°C
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
P
tot
(mW)
300
006aab113
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curve
PMBT3906YS_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 13 May 2009
3 of 12
NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
6. Thermal characteristics
Table 7.
Symbol
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
[1]
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
543
290
Unit
K/W
K/W
-
-
357
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
δ
=1
Z
th(j-a)
(K/W)
10
2
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab114
10
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMBT3906YS_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 13 May 2009
4 of 12
NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
=
−30
V; I
E
= 0 A
V
EB
=
−6
V; I
C
= 0 A
V
CE
=
−1
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
I
C
=
−100
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−10
mA;
I
B
=
−1
mA
I
C
=
−50
mA;
I
B
=
−5
mA
V
BEsat
base-emitter saturation
voltage
I
C
=
−10
mA;
I
B
=
−1
mA
I
C
=
−50
mA;
I
B
=
−5
mA
f
T
transition frequency
V
CE
=
−20
V;
I
C
=
−10
mA;
f = 100 MHz
V
CB
=
−5
V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
BE
=
−0.5
V;
I
C
= i
c
= 0 A;
f = 1 MHz
V
CE
=
−5
V;
I
C
=
−100 µA;
R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
V
CC
=
−3
V;
I
C
=
−10
mA;
I
Bon
=
−1
mA;
I
Boff
= 1 mA
60
80
100
60
30
-
-
-
-
250
180
180
180
130
50
−100
−165
−750
−850
-
-
-
300
-
-
−250
−400
−850
−950
-
mV
mV
mV
mV
MHz
Min
-
-
Typ
-
-
Max
−50
−50
Unit
nA
nA
Per transistor
C
c
collector capacitance
-
-
4.5
pF
C
e
emitter capacitance
-
-
10
pF
NF
noise figure
-
-
4
dB
t
d
t
r
t
on
t
s
t
f
t
off
delay time
rise time
turn-on time
storage time
fall time
turn-off time
-
-
-
-
-
-
-
-
-
-
-
-
35
35
70
225
75
300
ns
ns
ns
ns
ns
ns
PMBT3906YS_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 13 May 2009
5 of 12
京公网安备 11010802033920号
EEWORLD
