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PMBTA13

Description
NPN Darlington transistors
CategoryDiscrete semiconductor    The transistor   
File Size56KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMBTA13 Overview

NPN Darlington transistors

PMBTA13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)0.5 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)10000
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
VCEsat-Max1.5 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTA13; PMBTA14
NPN Darlington transistors
Product data sheet
Supersedes data of 1999 Apr 29
2004 Jan 22

PMBTA13 Related Products

PMBTA13 PMBTA14
Description NPN Darlington transistors NPN Darlington transistors
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code SOT-23 SOT-23
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3
Reach Compliance Code compli compli
Maximum collector current (IC) 0.5 A 0.5 A
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 10000 20000
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz
VCEsat-Max 1.5 V 1.5 V
Base Number Matches 1 1
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