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PMD5003K

Description
MOSFET driver
CategoryDiscrete semiconductor    The transistor   
File Size133KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PMD5003K Overview

MOSFET driver

PMD5003K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMD5003K
MOSFET driver
Rev. 01 — 6 November 2006
Product data sheet
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and high-speed
switching diode to protect the base-emitter junction in reverse direction in a SOT346
(SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
Low V
CEsat
(BISS) transistor and high-speed switching diode as driver
High-speed switching diode to protect the base-emitter junction
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
I
Power MOSFET driver
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
Diode
I
F
V
F
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse;
t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
−40
−1
−2
Unit
V
A
A
PNP transistor
forward current
forward voltage
Pulse test: t
p
300
µs; δ ≤
0.02.
-
I
F
= 200 mA
[1]
-
-
0.2
1.1
A
V
-
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