PMEG1020EA
2 A ultra low V
F
MEGA Schottky barrier rectifier
Rev. 04 — 30 December 2008
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in SOD323 (SC-76) very small
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
Forward current: I
F
≤
2 A
Reverse voltage: V
R
≤
10 V
Ultra low forward voltage
Very small SMD plastic package
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
280
Max
2
10
350
Unit
A
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PMEG1020EA
2 A ultra low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
sym001
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG1020EA
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 4.
Marking codes
Marking code
E2
Type number
PMEG1020EA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
I
FSM
T
j
T
amb
T
stg
Parameter
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.5
square wave;
t
p
= 8 ms
Conditions
Min
-
-
-
-
-
−65
−65
Max
10
2
3.2
9
150
+150
+150
Unit
V
A
A
A
°C
°C
°C
PMEG1020EA_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 30 December 2008
2 of 9
NXP Semiconductors
PMEG1020EA
2 A ultra low V
F
MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
450
210
90
Unit
K/W
K/W
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB with copper clad 10
×
10 mm.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.01 A
I
F
= 0.1 A
I
F
= 1 A
I
F
= 2 A
I
R
reverse current
V
R
= 5 V
V
R
= 8 V
V
R
= 10 V
C
d
[1]
[2]
[2]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
Typ
100
170
280
350
0.7
1
1.2
37
Max
130
200
350
460
2
2.5
3
45
Unit
mV
mV
mV
mV
mA
mA
mA
pF
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 5 V; f = 1 MHz
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
PMEG1020EA_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 30 December 2008
3 of 9
NXP Semiconductors
PMEG1020EA
2 A ultra low V
F
MEGA Schottky barrier rectifier
10
4
I
F
(mA)
10
3
mdb194
10
5
I
R
(µA)
10
4
(1)
mdb195
10
3
10
2
(1)
(2)
(3)
(2)
10
2
10
10
(3)
1
0
100
200
300
400
500
V
F
(mV)
1
0
2
4
6
8
V
R
(V)
10
(1) T
amb
= 85
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
(1) T
amb
= 85
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
120
C
d
(pF)
100
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mdb196
80
60
40
20
0
2
4
6
8
V
R
(V)
10
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG1020EA_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 30 December 2008
4 of 9
NXP Semiconductors
PMEG1020EA
2 A ultra low V
F
MEGA Schottky barrier rectifier
8. Test information
t
1
t
2
P
t
2
t
1
duty cycle
δ
=
t
006aaa812
Fig 4.
Duty cycle definition
9. Package outline
1.35
1.15
1
0.45
0.15
1.1
0.8
2.7
2.3
1.8
1.6
2
0.40
0.25
Dimensions in mm
0.25
0.10
03-12-17
Fig 5.
Package outline SOD323 (SC-76)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
PMEG1020EA SOD323
[1]
10000
-135
-115
For further information and the availability of packing methods, see
Section 14.
PMEG1020EA_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 30 December 2008
5 of 9
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