NXP Semiconductors
Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
FEATURES
•
Very low forward voltage
•
High surge current
•
Ultra small plastic SMD package.
APPLICATIONS
•
Low voltage rectification
•
High efficiency DC/DC conversion
•
Voltage clamping
•
Inverse polarity protection
•
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
QUICK REFERENCE DATA
SYMBOL
I
F
V
R
PARAMETER
forward current
reverse voltage
PMEG2005AEV
PMEG3005AEV
PMEG4005AEV
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
cathode
cathode
anode
anode
cathode
cathode
20
30
40
V
V
V
MAX.
0.5
UNIT
A
handbook, halfpage
6
5
4
1, 2
5, 6
3, 4
MHC310
1
2
3
Fig.1
MARKING
TYPE NUMBER
PMEG2005AEV
PMEG3005AEV
PMEG4005AEV
RELATED PRODUCTS
TYPE NUMBER
PMEGxx05AEA
PMEG2005EB
PMEG2010EA
DESCRIPTION
MARKING CODE
G1
G2
G3
Simplified outline (SOT666 and symbol).
FEATURE
SOD323 (SC-76) package
SOD523 (SC-79) package
higher forward current
0.5 A; 20/30/40 V very low V
F
MEGA Schottky rectifier
0.5 A; 20 V very low V
F
MEGA Schottky rectifier
1 A; 20 V very low V
F
MEGA Schottky rectifier
2003 Aug 20
2
NXP Semiconductors
Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
PARAMETER
continuous reverse voltage
PMEG2005AEV
PMEG3005AEV
PMEG4005AEV
I
F
I
FRM
I
FSM
T
j
T
amb
T
stg
Notes
1. Refer to SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel.
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
(P
R
) are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and I
F(AV)
rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
1. Refer to SOT666 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10
×
10 mm.
4. Solder point of cathode tab.
PARAMETER
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
CONDITIONS
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
VALUE
405
215
80
UNIT
K/W
K/W
K/W
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
operating ambient temperature
storage temperature
note 1
t
p
≤
1 ms;
δ ≤
0.5; note 2
t
p
= 8 ms; square wave; note 2
note 3
note 3
−
−
−
−
−
−
−
−65
−65
20
30
40
0.5
3.5
10
150
+150
+150
V
V
V
A
A
A
°C
°C
°C
CONDITIONS
MIN.
MAX.
UNIT
2003 Aug 20
3
NXP Semiconductors
Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
PMEG2005AEV PMEG3005AEV PMEG4005AEV
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
TYP.
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
R
continuous reverse
current
V
R
= 10 V; note 1
V
R
= 20 V; note 1
V
R
= 30 V; note 1
V
R
= 40 V; note 1
C
d
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
diode capacitance
V
R
= 1 V; f = 1 MHz
90
150
210
280
355
15
40
−
−
66
MAX.
130
190
240
330
390
40
200
−
−
80
TYP.
90
150
215
285
380
12
−
40
−
55
MAX.
130
200
250
340
430
30
−
150
−
70
TYP.
95
155
220
295
420
7
−
−
30
43
MAX.
130
210
270
350
470
20
−
−
100
50
mV
mV
mV
mV
mV
μA
μA
μA
μA
pF
UNIT
2003 Aug 20
4
NXP Semiconductors
Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
GRAPHICAL DATA
10
3
MDB675
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
handbook, halfpage
IF
(mA)
10
2
10
5
handbook, halfpage
IR
(μA)
(1)
MDB676
10
4
(1)
(2)
(3)
10
3
(2)
10
10
2
1
10
(3)
10
−1
0
0.2
0.4
VF (V)
0.6
1
0
PMEG2005AEV
(1) T
amb
= 150
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
5
10
15
VR (V)
20
PMEG2005AEV
(1) T
amb
= 150
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
150
MDB677
Cd
(pF)
100
50
0
0
5
10
15
VR (V)
20
PMEG2005AEV
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
5
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