DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
PMEG2010AEB
20 V, 1 A ultra low V
F
MEGA
Schottky barrier rectifier in
SOD523 package
Product data sheet
2003 Dec 03
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low V
F
MEGA Schottky
barrier rectifier in SOD523 package
FEATURES
•
Forward current: 1.0 A
•
Reverse voltage: 20 V
•
Ultra low forward voltage
•
Ultra small SMD package.
PINNING
APPLICATIONS
•
Low voltage rectification
•
High efficiency DC/DC conversion
•
Voltage clamping
•
Inverse-polarity protection
•
Low power consumption applications.
1
2
PMEG2010AEB
QUICK REFERENCE DATA
SYMBOL
I
F
V
R
PARAMETER
forward current
reverse voltage
MAX.
1
20
UNIT
A
V
PIN
1
2
DESCRIPTION
cathode
anode
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small plastic SMD package.
Top view
col001
Marking code:
L6.
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PMEG2010AEB
RELATED PRODUCTS
TYPE
PMEG2005EB
PMEG2010EA
DESCRIPTION
1 A; 20 V very low V
F
MEGA Schottky rectifier
FEATURE
Lower forward current, lower I
R
SOD323
(SC76)
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD523
0.5 A; 20 V very low V
F
MEGA Schottky rectifier Lower I
R
in same package
2003 Dec 03
2
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low V
F
MEGA Schottky
barrier rectifier in SOD523 package
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
Note
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
note 1
note 1
T
s
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.5
t = 8 ms square wave
CONDITIONS
−
−
−
−
−65
−
−65
PMEG2010AEB
MIN.
MAX.
20
1.0
3.5
6
+150
150
+150
V
A
A
A
UNIT
°C
°C
°C
1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Notes
1. Refer to SOD523 (SC-79) standard mounting conditions.
2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
3. Solder point of cathode tab.
PARAMETER
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
CONDITIONS
in free air; notes 1 and 2
notes 2 and 3
VALUE
400
75
UNIT
K/W
K/W
2003 Dec 03
3
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low V
F
MEGA Schottky
barrier rectifier in SOD523 package
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 000 mA
I
R
C
d
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
continuous reverse current
diode capacitance
V
R
= 10 V; note 1
V
R
= 20 V; note 1
V
R
= 1 V; f = 1 MHz
CONDITIONS
I
F
= 0.1 mA
PMEG2010AEB
TYP.
30
80
140
230
510
0.17
0.32
19
MAX.
60
110
190
290
620
0.6
1.5
25
UNIT
mV
mV
mV
mV
mV
mA
mA
pF
2003 Dec 03
4
NXP Semiconductors
Product data sheet
20 V, 1 A ultra low V
F
MEGA Schottky
barrier rectifier in SOD523 package
GRAPHICAL DATA
PMEG2010AEB
10
3
I
F
(mA)
10
2
com001
10
5
handbook, halfpage
I
R
(μA)
10
4
(1)
MLE228
10
3
(2)
(1)
(2)
(3)
10
10
2
10
1
(3)
1
10
−1
0
0.2
0.4
0.6
V
F
(V)
0.8
10
−1
0
8
16
VR (V)
24
(1) T
amb
= 85
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
(1) T
amb
= 85
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
30
C
d
(pF)
25
com002
20
15
10
5
0
0
5
10
15
V
R
(V)
20
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Dec 03
5
Analog electronics
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