PMEG2010AEH; PMEG2010AET
1 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 03 — 28 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device
(SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PMEG2010AEH
PMEG2010AET
SOD123F
SOT23
JEITA
-
-
single
single
Configuration
Type number
1.2 Features
I
I
I
I
Forward current: I
F
≤
1 A
Reverse voltage: V
R
≤
20 V
Very low forward voltage
Small SMD plastic packages
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
380
Max
1
20
430
Unit
A
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PMEG2010AEH; PMEG2010AET
1 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
SOD123F
1
2
cathode
anode
[1]
Pinning
Description
Simplified outline
Symbol
1
1
2
2
sym001
SOT23
1
2
3
anode
not connected
cathode
1
2
3
1
3
2
n.c.
006aaa436
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG2010AEH
PMEG2010AET
-
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 3 leads
Version
SOD123F
SOT23
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
AF
*AX
Type number
PMEG2010AEH
PMEG2010AET
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMEG2010AEH_PMEG2010AET_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 March 2007
2 of 11
NXP Semiconductors
PMEG2010AEH; PMEG2010AET
1 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
Parameter
reverse voltage
forward current
repetitive peak forward current
PMEG2010AEH
PMEG2010AET
I
FSM
P
tot
non-repetitive peak forward
current
total power dissipation
PMEG2010AEH
PMEG2010AET
T
j
T
amb
T
stg
[1]
[2]
Conditions
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.25
Min
-
-
Max
20
1
Unit
V
A
-
-
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
7
6
9
A
A
A
-
-
-
-
-
-
−65
−65
375
830
280
420
150
+150
+150
mW
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG2010AEH
PMEG2010AET
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG2010AEH
PMEG2010AET
[1]
[2]
[3]
[4]
Conditions
in free air
[1]
Min
Typ
Max
Unit
[2]
[3]
[2]
[3]
[4]
-
-
-
-
-
-
-
-
330
150
440
300
K/W
K/W
K/W
K/W
-
-
-
-
60
120
K/W
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
PMEG2010AEH_PMEG2010AET_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 March 2007
3 of 11
NXP Semiconductors
PMEG2010AEH; PMEG2010AET
1 A very low V
F
MEGA Schottky barrier rectifiers
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1 A
I
R
reverse current
V
R
= 5 V
V
R
= 10 V
V
R
= 20 V
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
Typ
200
265
380
15
20
50
55
Max
220
290
430
50
80
200
70
Unit
mV
mV
mV
µA
µA
µA
pF
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 5 V; f = 1 MHz
PMEG2010AEH_PMEG2010AET_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 March 2007
4 of 11
NXP Semiconductors
PMEG2010AEH; PMEG2010AET
1 A very low V
F
MEGA Schottky barrier rectifiers
10
4
I
F
(mA)
10
3
mdb823
I
R
(µA)
10
5
10
4
10
3
(1)
(2)
006aab033
10
2
(1)
(2)
(3)
(4)
10
2
10
(3)
10
1
10
−1
1
10
−2
10
−1
10
−3
0
5
10
15
V
R
(V)
20
(4)
0
0.1
0.2
0.3
0.4
V
F
(V)
0.5
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
mdb824
200
C
d
(pF)
150
100
50
0
0
5
10
15
V
R
(V)
20
f = 1 MHz; T
amb
= 25
°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
PMEG2010AEH_PMEG2010AET_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 28 March 2007
5 of 11
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