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PMEG2010BER

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size80KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

PMEG2010BER Overview

1 A, SILICON, SIGNAL DIODE

PMEG2010BER Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingTIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit1.8 W
Diode typeSIGNAL DIODE
Maximum average forward current1 A
PMEG2010BER
1 A low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 16 April 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
Average forward current: I
F(AV)
1 A
Reverse voltage: V
R
20 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
125
°C
T
sp
140
°C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
395
8
1
1
20
450
50
A
A
V
mV
µA
reverse voltage
forward voltage
reverse current
I
F
= 1 A
V
R
= 20 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
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