PMEG2010ER
1 A low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 29 December 2008
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
Average forward current: I
F(AV)
≤
1 A
Reverse voltage: V
R
≤
20 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
130
°C
T
sp
≤
145
°C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
310
250
1
1
20
340
1000
A
A
V
mV
µA
reverse voltage
forward voltage
reverse current
I
F
= 1 A
V
R
= 20 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG2010ER
1 A low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG2010ER
-
Description
plastic surface-mounted package; 2 leads
Version
SOD123W
Type number
4. Marking
Table 4.
Marking codes
Marking code
B5
Type number
PMEG2010ER
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
Conditions
T
j
= 25
°C
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
130
°C
T
sp
≤
145
°C
I
FSM
P
tot
non-repetitive peak
forward current
total power dissipation
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[2]
[1]
Min
-
Max
20
Unit
V
-
-
-
-
-
-
1
1
50
0.57
0.95
1.8
A
A
A
W
W
W
[3][4]
[3][5]
[3][1]
PMEG2010ER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 December 2008
2 of 13
NXP Semiconductors
PMEG2010ER
1 A low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
220
130
70
18
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG2010ER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 December 2008
3 of 13
NXP Semiconductors
PMEG2010ER
1 A low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
10
0.02
0.05
0.01
0.75
0.33
0.2
006aab260
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab261
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.05
0.02
0.01
10
0.1
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2010ER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 December 2008
4 of 13
NXP Semiconductors
PMEG2010ER
1 A low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
1
0.5
0.25
10
0.1
0.05
0.02
1
0
0.01
0.75
0.33
0.2
006aab262
duty cycle =
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.1 A
I
F
= 0.7 A
I
F
= 1 A
I
R
C
d
reverse current
diode capacitance
V
R
= 5 V
V
R
= 20 V
f = 1 MHz
V
R
= 1 V
V
R
= 10 V
-
-
175
65
-
-
pF
pF
Min
-
-
-
-
-
Typ
220
290
310
60
250
Max
250
320
340
-
1000
Unit
mV
mV
mV
µA
µA
PMEG2010ER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 December 2008
5 of 13
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