NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
FEATURES
•
Forward current: 0.2 A
•
Reverse voltage: 30 V
•
Very low forward voltage
•
Ultra small SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
High efficiency DC/DC conversion
•
Voltage clamping
•
Inverse-polarity protection
•
Low voltage rectification
•
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small SMD plastic package.
, 4 columns
PMEG3002AEB
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
1
2
MGU328
Marking code:
B1.
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
= 8.3 ms half sinewave;
JEDEC method
CONDITIONS
−
−
−
−
−65
−
−65
MIN.
MAX.
30
200
300
1
+150
125
+125
V
mA
mA
A
°C
°C
°C
UNIT
2002 May 06
2
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
Note
1. Pulsed test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
continuous reverse current
diode capacitance
V
R
= 10 V; see Fig.3; note 1
PMEG3002AEB
TYP.
130
190
255
355
420
2.5
MAX.
190
250
300
400
480
10
25
UNIT
mV
mV
mV
mV
mV
μA
pF
V
R
= 1 V; f = 1 MHz; see Fig.4 20
VALUE
450
UNIT
K/W
2002 May 06
3
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
GRAPHICAL DATA
PMEG3002AEB
handbook, halfpage
10
4
MHC187
handbook, halfpage
10
4
MHC188
IF
(mA)
10
3
IR
(μA)
(1)
10
3
(2)
10
2
10
2
(1)
(2)
(3)
10
10
(3)
1
0
0.2
0.4
0.6
0.8
VF (V)
1
1
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
40
MHC189
Cd 35
(pF)
30
25
20
15
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2002 May 06
4
NXP Semiconductors
Product data sheet
Low V
F
MEGA Schottky barrier diode
PACKAGE OUTLINE
PMEG3002AEB
Plastic surface mounted package; 2 leads
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. The marking bar indicates the cathode.
A
0.65
0.58
bp
0.34
0.26
c
0.17
0.11
D
1.25
1.15
E
0.85
0.75
HE
1.65
1.55
v
0.1
(1)
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
JEITA
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
02-12-13
2002 May 06
5
51mcu
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