PMEG4010EPK
62
'
40 V, 1 A low VF MEGA Schottky barrier rectifier
Rev. 2 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a leadless ultra small
SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
1.2 Features and benefits
Average forward current: I
F(AV)
≤
1 A
Reverse voltage: V
R
≤
40 V
Low forward voltage V
F
≤
600 mV
Low reverse current
AEC-Q101 qualified
Solderable side pads
Package height typ. 0.37 mm
Ultra small and leadless SMD plastic
package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
LED backlight for mobile application
Low power consumption applications
Ultra high-speed switching
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I
F(AV)
Quick reference data
Parameter
average forward
current
Conditions
δ
= 0.5; f = 20 kHz; T
amb
≤
90 °C;
square wave
δ
= 0.5; f = 20 kHz; T
sp
≤
135 °C;
square wave
V
R
V
F
I
R
t
rr
reverse voltage
forward voltage
reverse current
reverse recovery time
T
j
= 25 °C
I
F
= 1 A; pulsed; t
p
≤
300 µs;
δ ≤
0.02;
T
j
= 25 °C
V
R
= 10 V; T
j
= 25 °C
I
R
= 0.5 A; I
F
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
[1]
Min
-
-
-
-
-
-
Typ
-
-
-
540
0.6
3
Max
1
1
40
600
4
-
Unit
A
A
V
mV
µA
ns
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
1
2
sym001
Simplified outline
Graphic symbol
1
2
Transparent top view
SOD1608 (DFN1608D-2)
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG4010EPK
DFN1608D-2
Description
Leadless ultra small plastic package; 2 terminals
Version
SOD1608
Type number
4. Marking
Table 4.
Marking codes
Marking code
1010 0000
Type number
PMEG4010EPK
VENDOR CODE
CATHODE BAR
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac909
Fig 1.
SOD1608 binary marking code description
PMEG4010EPK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 6 March 2012
2 of 14
NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
5. Limiting values
Table 5.
Symbol
V
R
I
F
I
F(AV)
Limiting values
Parameter
reverse voltage
forward current
average forward current
Conditions
T
j
= 25 °C
T
sp
≤
130 °C
δ
= 0.5; f = 20 kHz; square wave;
T
amb
≤
90 °C
δ
= 0.5; f = 20 kHz; square wave;
T
sp
≤
135 °C
I
FRM
I
FSM
P
tot
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
t
p
≤
1 ms;
δ ≤
0.25
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤
25 °C
[2][3]
[4][3]
[1][3]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Min
-
-
-
-
-
-
-
-
-
-
-55
-65
Max
40
1.4
1
1
3
5
410
860
1565
150
150
150
Unit
V
A
A
A
A
A
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
junction temperature
ambient temperature
storage temperature
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1][2][3]
[1][4][3]
[1][5][3]
[6]
Min
-
-
-
-
Typ
-
-
-
-
Max
305
145
80
20
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a significant
part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG4010EPK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 6 March 2012
3 of 14
NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
10
3
006aac997
Z
th(j-a)
(K/W)
duty cycle =
1
0.75
0.5
10
2
0.33
0.2
0.25
0.1
0.05
0.02
0.01
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
10
10
-3
0
FR4 PCB, standard footprint
Fig 2.
10
3
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac998
Z
th(j-a)
(K/W)
duty cycle =
10
2
1
0.75
0.5
0.33
0.2
0.05
10
10
-3
0
0.02
0.01
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
0.25
0.1
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG4010EPK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 6 March 2012
4 of 14
NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
10
2
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
006aac999
0.25
0.1
0.05
0
10
10
-3
0.02
0.01
10
-2
10
-1
10
2
10
3
1
10
t
p
(s)
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 100 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02; T
j
= 25 °C
I
F
= 500 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02; T
j
= 25 °C
I
F
= 700 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02; T
j
= 25 °C
I
F
= 1 A; pulsed; t
p
≤
300 µs;
δ ≤
0.02;
T
j
= 25 °C
I
R
C
d
t
rr
V
FRM
reverse current
diode capacitance
reverse recovery time
peak forward recovery
voltage
V
R
= 10 V; T
j
= 25 °C
V
R
= 40 V; T
j
= 25 °C
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C
I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C
Min
-
-
-
-
-
-
-
-
-
-
Typ
345
440
480
540
0.6
3
50
20
3
460
Max
390
500
550
600
4
20
60
25
-
-
Unit
mV
mV
mV
mV
µA
µA
pF
pF
ns
mV
PMEG4010EPK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 6 March 2012
5 of 14
京公网安备 11010802033920号
EEWORLD
