DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D302
PMEG6010AED
Low V
F
(MEGA) Schottky barrier
diode
Product data sheet
2003 Jun 27
NXP Semiconductors
Product data sheet
Low V
F
(MEGA) Schottky barrier diode
FEATURES
•
Low switching losses
•
Very high surge current absorption capability
•
Fast recovery time
•
Guard ring protected
•
Plastic SMD package.
APPLICATIONS
•
Low power switched-mode power supplies
•
Rectification
•
Polarity protection.
handbook, halfpage
6
PMEG6010AED
PINNING
PIN
1
2
3
4
5
6
cathode
cathode
anode
anode
cathode
cathode
DESCRIPTION
5
4
GENERAL DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOT457
(SC-74) small plastic package.
1
2
3
MHC634
1, 2
5, 6
3, 4
Marking code:
M4.
Fig.1
Simplified outline SOT457 (SC-74) and
symbol.
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for cathode 6 cm
2
.
PARAMETER
continuous reverse voltage
continuous forward current
T
amb
≤
25
°C;
note 1
non-repetitive peak forward current t = 8 ms; square wave
non-repetitive peak reverse current t
p
= 100
μs
storage temperature
junction temperature
CONDITIONS
−
−
−
−
−65
−
MIN.
1
17.5
0.5
+150
+150
MAX.
60
V
A
A
A
°C
°C
UNIT
2003 Jun 27
2
NXP Semiconductors
Product data sheet
Low V
F
(MEGA) Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
continuous forward voltage
continuous reverse current
I
F
= 1 A
V
R
= 60 V; see Fig.3
V
R
= 60 V; T
j
= 100
°C;
notes 1 and 2
C
d
Notes
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
diode capacitance
V
R
= 4 V; f = 1 MHz; see Fig.4
CONDITIONS
I
F
= 0.1 A
PMEG6010AED
MAX.
400
650
350
8
60
mV
mV
μA
mA
pF
UNIT
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
P
R
are a significant part of the total power losses.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
in free air; note 2
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm
2
.
2. Device mounted on a printed-circuit board, single-sided copper; tinplated, mounting pad for cathode 6 cm
2
.
VALUE
230
180
UNIT
K/W
K/W
2003 Jun 27
3
NXP Semiconductors
Product data sheet
Low V
F
(MEGA) Schottky barrier diode
GRAPHICAL DATA
PMEG6010AED
handbook, halfpage
10
3
MHC635
10
−2
handbook, halfpage
IR
(A)
10
−3
(1)
MHC636
IF
(mA)
10
2
(2)
(3)
10
−4
(1) (2) (3)
(4)
10
10
−5
(4)
1
0
0.2
0.4
VF (V)
0.6
10
−6
0
20
40
VR (V)
60
(1) T
amb
= 125
°C.
(2) T
amb
= 100
°C.
(3) T
amb
= 75
°C.
(4) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 100
°C.
(3) T
amb
= 75
°C.
(4) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
200
MHC637
Cd
(pF)
160
120
80
40
0
0
20
40
VR (V)
60
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Jun 27
4
NXP Semiconductors
Product data sheet
Low V
F
(MEGA) Schottky barrier diode
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
PMEG6010AED
SOT457
D
B
E
A
X
y
HE
v
M
A
6
5
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
e
bp
w
M
B
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A1
0.1
0.013
bp
0.40
0.25
c
0.26
0.10
D
3.1
2.7
E
1.7
1.3
e
0.95
HE
3.0
2.5
Lp
0.6
0.2
Q
0.33
0.23
v
0.2
w
0.2
y
0.1
OUTLINE
VERSION
SOT457
REFERENCES
IEC
JEDEC
EIAJ
SC-74
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
2003 Jun 27
5
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