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PMF370XN

Description
N-channel TrenchMOS extremely low level FET
CategoryDiscrete semiconductor    The transistor   
File Size161KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMF370XN Overview

N-channel TrenchMOS extremely low level FET

PMF370XN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.87 A
Maximum drain current (ID)0.87 A
Maximum drain-source on-resistance0.44 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.56 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMF370XN
N-channel TrenchMOS extremely low level FET
Rev. 03 — 20 June 2008
Product data sheet
1. Product profile
1.1 General description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Saves PCB space due to small footprint
(40 % smaller than SOT23)
Surface-mounted package
Low threshold voltage
Suitable for low gate drive sources
1.3 Applications
Driver circuits
Switching in portable appliances
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
R
DSon
Quick reference
Conditions
T
j
25
°C;
T
j
150
°C
T
sp
= 25
°C;
V
GS
= 4.5 V;
see
Figure 1
and
3
T
sp
= 25
°C;
see
Figure 2
V
GS
= 4.5 V; I
D
= 0.2 A;
T
j
= 25
°C;
see
Figure 9
and
10
Min
-
-
-
-
Typ
-
-
-
370
Max
30
0.87
0.56
440
Unit
V
A
W
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Symbol Parameter
Static characteristics
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