DISCRETE SEMICONDUCTORS
DATA SHEET
PMST3904
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Jan 21
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Collector current capability I
C
= 200 mA
•
Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
•
General amplification and switching.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST3906.
MARKING
TYPE NUMBER
PMST3904
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
MARKING CODE
(1)
∗1A
handbook, halfpage
PMST3904
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
MAX.
40
200
UNIT
V
mA
3
3
1
2
1
Top view
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMST3904
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT323
2004 Jan 21
2
NXP Semiconductors
Product data sheet
NPN switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
625
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
PMST3904
MAX.
60
40
6
200
200
100
200
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
UNIT
K/W
2004 Jan 21
3
NXP Semiconductors
Product data sheet
NPN switching transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; see Fig.2; note 1
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= I
c
= 0; V
BE
= 500 mV;
f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V;
f = 100 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
60
80
100
60
30
−
−
650
−
−
−
300
−
−
−
−
−
MIN.
PMST3904
MAX.
50
50
UNIT
nA
nA
300
−
−
200
300
850
950
4
8
−
5
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.7
t
d
t
r
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
delay time
rise time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−1
mA
−
−
−
−
35
35
200
50
ns
ns
ns
ns
2004 Jan 21
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
handbook, halfpage
500
MGU821
MGU822
handbook, halfpage
250
h FE
400
(1)
IC
(mA)
(1)
(2)
(3)
(4)
(5) (6)
(7)
200
300
150
(8)
(2)
(9)
200
100
(10)
(3)
100
50
0
10
−1
1
10
10
2
I C (mA)
10
3
0
0
T
amb
= 25
°C.
(1) I
B
= 5 mA.
(5) I
B
= 3 mA.
(6) I
B
= 2.5 mA.
(7) I
B
= 2 mA.
(8) I
B
= 1.5 mA.
(9) I
B
= 1 mA.
(10) I
B
= 0.5 mA.
2
4
6
8
10
VCE (V)
V
CE
= 1 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
(2) I
B
= 4.5 mA.
(3) I
B
= 4 mA.
(4) I
B
= 3.5 mA.
Fig.3
Fig.2 DC current gain; typical values.
Collector current as a function of
collector-emitter voltage.
handbook, halfpage
1200
MGU823
MGU824
VBE
handbook, halfpage
1200
VBEsat
(mV)
(mV)
1000
(1)
1000
(1)
(2)
800
(2)
800
600
600
(3)
(3)
400
400
200
10
−1
1
10
10
2
I C (mA)
10
3
200
10
−1
1
10
10
2
I C (mA)
10
3
V
CE
= 1 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Base-emitter voltage as a function of
collector current.
Fig.5
Base-emitter saturation voltage as a
function of collector current.
2004 Jan 21
5
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