PMST3906
40 V, 200 mA PNP switching transistor
Rev. 05 — 29 April 2009
Product data sheet
1. Product profile
1.1 General description
PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMST3904.
1.2 Features
I
Collector current: I
C
≤ −200
mA
I
Collector-emitter voltage: V
CEO
≤ −40
V
I
Very small SMD plastic package
1.3 Applications
I
General amplification and switching
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
Quick reference data
Parameter
collector-emitter voltage
collector current
Conditions
open base
Min
-
-
Typ
-
-
Max
−40
−200
Unit
V
mA
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
3
1
2
sym013
Simplified outline
Graphic symbol
3
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
PMST3906
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
4. Marking
Table 4.
PMST3906
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*2A
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
−65
−65
Max
−40
−40
−6
−200
−200
−100
200
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
625
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMST3906_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
2 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
Conditions
Min
-
-
Typ
-
-
Max
−50
−50
Unit
nA
nA
collector-base cut-off I
E
= 0 A; V
CB
=
−30
V
current
emitter-base cut-off
current
DC current gain
I
C
= 0 A; V
EB
=
−6
V
V
CE
=
−1
V
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
I
C
=
−100
mA
V
CEsat
V
BEsat
t
d
t
r
t
on
t
s
t
f
t
off
C
c
C
e
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance I
E
= i
e
= 0 A; V
CB
=
−5
V;
f = 1 MHz
emitter capacitance
I
C
= i
c
= 0 A;
V
EB
=
−500
mV;
f = 1 MHz
I
C
=
−10
mA;
V
CE
=
−20
V;
f = 100 MHz
I
C
=
−100 µA;
V
CE
=
−5
V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
C
=
−10
mA;
I
Bon
=
−1
mA;
I
Boff
= 1 mA
60
80
100
60
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
-
−250
−400
−850
−950
35
35
70
225
75
300
4.5
10
mV
mV
mV
mV
ns
ns
ns
ns
ns
ns
pF
pF
f
T
transition frequency
250
-
-
MHz
NF
noise figure
-
-
4
dB
PMST3906_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
3 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
600
h
FE
(1)
mhc459
−250
I
C
(mA)
−200
006aab475
I
B
(mA) =
−1.5
−1.35
−1.20
−1.05
−0.75
400
−150
−0.90
−0.60
(2)
−100
−0.45
200
(3)
−0.30
−50
−0.15
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
0
0
−2
−4
−6
−8
−10
V
CE
(V)
V
CE
=
−1
V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
T
amb
= 25
°C
Fig 1.
DC current gain as a function of collector
current; typical values
mhc461
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
mhc462
−1200
V
BE
(mV)
−1000
(1)
−1200
V
BEsat
(mV)
−1000
(1)
−800
(2)
−800
(2)
−600
(3)
−600
(3)
−400
−400
−200
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−200
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
=
−1
V
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
I
C
/I
B
= 10
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
Fig 3.
Base-emitter voltage as a function of collector
current; typical values
Fig 4.
Base-emitter saturation voltage as a function
of collector current; typical values
PMST3906_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
4 of 10
NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
−10
3
V
CEsat
(mV)
mhc463
(1)
−10
2
(2)
(3)
−10
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
I
C
/I
B
= 10
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
Fig 5.
Collector-emitter saturation voltage as a function of collector current;
typical values
8. Test information
V
BB
V
CC
R
B
oscilloscope
V
I
R1
(probe)
450
Ω
R2
R
C
V
o
(probe)
450
Ω
DUT
oscilloscope
mgd624
V
I
= 5 V; t = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω
V
BB
= 1.9 V; V
CC
=
−3
V
Oscilloscope: input impedance Z
I
= 50
Ω
Fig 6.
Test circuit for switching times
PMST3906_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 29 April 2009
5 of 10
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