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SSM6J216FE_14

Description
MOSFETs Silicon P-Channel MOS (U-MOSVI)
File Size217KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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SSM6J216FE_14 Overview

MOSFETs Silicon P-Channel MOS (U-MOSVI)

SSM6J216FE
MOSFETs
Silicon P-Channel MOS (U-MOS)
SSM6J216FE
1. Applications
Power Management Switches
2. Features
(1)
(2)
1.5-V gate drive voltage.
Low drain-source on-resistance
: R
DS(ON)
= 88.1 mΩ (max) (@V
GS
= -1.5 V)
R
DS(ON)
= 56.0 mΩ (max) (@V
GS
= -1.8 V)
R
DS(ON)
= 39.3 mΩ (max) (@V
GS
= -2.5 V)
R
DS(ON)
= 32.0 mΩ (max) (@V
GS
= -4.5 V)
3. Packaging and Pin Configuration
1.2.5.6 : Drain
3
: Gate
4
: Source
ES6
Start of commercial production
1
2012-11
2014-03-12
Rev.3.0
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FIFO memoryFIFO memory...
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