V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.39 V at I
F
= 5 A
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
FEATURES
ITO-220AB
TO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
3
2
V30100S
PIN 1
PIN 2
CASE
1
VF30100S
PIN 1
1
PIN 2
2
3
PIN 3
PIN 3
D
2
PAK (TO-263AB)
TO-262AA
K
K
TYPICAL APPLICATIONS
A
NC
VB30100S
NC
A
K
HEATSINK
VI30100S
PIN 1
1
PIN 2
K
2
3
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
PIN 3
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 30 A
T
J
max.
Package
Circuit configuration
30 A
100 V
250 A
0.69 V
150 °C
TO-220AB, ITO-220AB,
D
2
PAK (TO-263AB),TO-262AA
Single
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 90 mH
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V30100S
VF30100S
30
250
230
1.0
10 000
1500
-40 to +150
VB30100S
VI30100S
UNIT
V
A
A
mJ
A
V/μs
V
°C
100
Revision: 18-Jun-2018
Document Number: 88941
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
SYMBOL
V
BR
TYP.
105 (minimum)
0.47
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
0.55
0.80
0.39
0.49
0.69
27
11
70
23
MAX.
-
-
-
0.91
-
-
0.78
-
-
1000
45
μA
mA
μA
mA
V
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
I
R
= 10 mA
I
F
= 5 A
I
F
= 10 A
Instantaneous forward voltage
I
F
= 30 A
I
F
= 5 A
I
F
= 10 A
I
F
= 30 A
V
R
= 70 V
Reverse current
V
R
= 100 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
T
A
= 25 °C
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
V30100S
2.0
VF30100S
4.0
VB30100S
2.0
VI30100S
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V30100S-E3/4W
VF30100S-E3/4W
VB30100S-E3/4W
VB30100S-E3/8W
VI30100S-E3/4W
UNIT WEIGHT (g)
1.875
1.805
1.380
1.380
1.455
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
25
VF30100S
20
15
10
5
0
0
25
50
75
100
125
150
Mounted on
Specific
Heatsink
V(B,I)30100S
32
D = 0.5 D = 0.8
28
D = 0.3
D = 0.2
D = 0.1
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
24
20
16
12
T
8
4
D = t
p
/T
0
0
4
8
12
16
20
24
28
32
36
t
p
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 18-Jun-2018
Document Number: 88941
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
10
100
T
A
= 150 °C
10
T
A
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
1
0.1
T
A
= 25 °C
1
0.01
V(B,I)30100S
0.001
0.01
0.1
1
10
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
1000
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
100
T
A
= 150 °C
10
T
A
= 125 °C
1
0.1
T
A
= 25 °C
0.01
VF30100S
1
0.01
0.1
1
10
100
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
Fig. 5 - Typical Junction Capacitance
Revision: 18-Jun-2018
Document Number: 88941
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 18-Jun-2018
Document Number: 88941
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 18-Jun-2018
Document Number: 88941
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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