DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D121
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
Product data sheet
Supersedes data of 1996 May 03
1999 Apr 22
NXP Semiconductors
Product data sheet
Schottky barrier diodes
FEATURES
•
Low switching losses
•
Fast recovery time
•
Guard ring protected
•
Hermetically sealed glass SMD
package.
APPLICATIONS
•
Low power, switched-mode power
supplies
•
Rectifying
•
Polarity protection.
DESCRIPTION
The PRLL5817 to PRLL5819 types
are Schottky barrier diodes fabricated
in planar technology, and
encapsulated in SOD87 hermetically
sealed glass SMD packages
incorporating Implotec
TM(1)
technology.
(1) Implotec is a trademark of Philips.
handbook, halfpage
PRLL5817; PRLL5818;
PRLL5819
k
a
MAM190
Fig.1 Simplified outline (SOD87) and symbol.
MARKING
TYPE NUMBER
PRLL5817
PRLL5818
PRLL5819
9
9
9
MARKING CODE
1999 Apr 22
2
NXP Semiconductors
Product data sheet
Schottky barrier diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
PRLL5817
PRLL5818
PRLL5819
V
RSM
non-repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
V
RRM
repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
V
RWM
crest working reverse voltage
PRLL5817
PRLL5818
PRLL5819
I
F(AV)
I
FSM
T
stg
T
j
average forward current
non-repetitive peak forward current
storage temperature
junction temperature
T
amb
= 60
°C
PARAMETER
continuous reverse voltage
CONDITIONS
PRLL5817; PRLL5818;
PRLL5819
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
MAX.
20
30
40
24
36
48
20
30
40
20
30
40
1
25
+175
125
V
V
V
V
V
V
V
V
V
V
V
V
A
A
UNIT
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge: V
R
= 0
°C
°C
1999 Apr 22
3
NXP Semiconductors
Product data sheet
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
PRLL5817
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
V
F
forward voltage
PRLL5818
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
V
F
forward voltage
PRLL5819
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
I
R
C
d
reverse current
diode capacitance
PRLL5817
PRLL5818
PRLL5819
Note
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD87 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
V
R
= V
RRMmax
; note 1
V
R
= V
RRMmax
; T
j
= 100
°C
V
R
= 4 V; f = 1 MHz
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CONDITIONS
PRLL5817; PRLL5818;
PRLL5819
MIN.
−
−
−
−
−
−
−
−
−
TYP.
MAX.
320
450
750
330
550
875
340
600
900
1
10
−
−
−
UNIT
mV
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
pF
pF
pF
0.5
5
70
50
50
CONDITIONS
note 1
VALUE
150
UNIT
K/W
1999 Apr 22
4
NXP Semiconductors
Product data sheet
Schottky barrier diodes
GRAPHICAL DATA
PRLL5817; PRLL5818;
PRLL5819
handbook, halfpage
5
MBE634
IF
(A)
4
Tj = 125 oC
25 oC
3
2
1
0
0
0.5
VF (V)
1
Fig.2 Typical forward voltage.
1
a=3
PF(AV)
(W)
2.5
2
1.57
1.42
1
MBE642
0.5
0
0
0.5
1
1.5
IF(AV) (A)
2
Fig.3
PRLL817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
5
1999 Apr 22
Analog electronics
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