UNISONIC TECHNOLOGIES CO., LTD
UTT20N06
20A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UTT20N06
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC
UTT20N06
is universally applied in low voltage, such as
automotive, high efficiency switching for DC/DC converters and DC
motor control.
FEATURES
* R
DS(ON)
<46mΩ @V
GS
= 10 V
* Typically 58pF low C
RSS
* High switching speed
* Typically 21.2nC low gate charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220
TO-252
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UTT20N06L-TA3-T
UTT20N06G-TA3-T
UTT20N06L-TN3-T
UTT20N06G-TN3-T
UTT20N06L-TN3-R
UTT20N06G-TN3-R
UTT20N06L-TQ2-T
UTT20N06G-TQ2-T
UTT20N06L-TQ2-R
UTT20N06G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-708.C
UTT20N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20
V
20
A
Continuous
I
D
Drain Current
Pulsed
I
DM
80
A
Single Pulsed Avalanche Energy
E
AS
170
mJ
TO-220/TO-263
89
W
Power Dissipation
P
D
TO-252
50
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62
110
1.4
2.5
UNIT
°C/W
°C/W
PARAMETER
TO-220/TO-263
Junction to Ambient
TO-252
TO-220/TO-263
Junction to Case
TO-252
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T
C
=125°C
V
GS
=+16V, V
DS
=0V
V
GS
=-16V, V
DS
=0V
MIN TYP MAX UNIT
60
1
10
+100
-100
2.0
37.5
4.0
46
V
µA
µA
nA
nA
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=20A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=30V, I
D
=20A,
Gate to Source Charge
Q
GS
I
G
=3.33mA
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=1A, R
G
=25Ω,
V
GS
=10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=20A, V
GS
=0V
725 1015
213 300
58 120
21.2
5.6
7.3
9.5
60.5
27.1
37.1
20
80
1.2
30
120
80
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-708.C
UTT20N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-708.C
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