PUMH1 datasheet, PDF - EEWORLD Datasheet

PUMH1: DescriptionNPN/NPN resistor-equipped transistors; R1 = 22 kÎ©, R2 = 22 kÎ©; CategoryDiscrete semiconductor The transistor; File Size65KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PUMH1 Overview

NPN/NPN resistor-equipped transistors; R1 = 22 kÎ©, R2 = 22 kÎ©

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SC-88
package instruction	PLASTIC, SC-88, 6 PIN
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	0.4 W
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.3 V

DISCRETE SEMICONDUCTORS

DATA SHEET

PEMH1; PUMH1

NPN/NPN resistor-equipped

transistors; R1 = 22 kΩ, R2 = 22 kΩ

Product data sheet

Supersedes data of 2001 Oct 22

2003 Oct 08

	PUMH1	PEMH1
Description	NPN/NPN resistor-equipped transistors; R1 = 22 kÎ©, R2 = 22 kÎ©	NPN/NPN resistor-equipped transistors; R1 = 22 kÎ©, R2 = 22 kÎ©
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	PLASTIC, SC-88, 6 PIN	PLASTIC PACKAGE-6
Contacts	6	6
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	60	60
JESD-30 code	R-PDSO-G6	R-PDSO-F6
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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