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RJF0604JPD

Description
Silicon N Channel MOS FET Series Power Switching
File Size52KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJF0604JPD Overview

Silicon N Channel MOS FET Series Power Switching

Target Specifications
Datasheet
RJF0604JPD
Silicon N Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS0583EJ0100
Rev.1.00
Nov 22, 2011
Features
Logic level operation (5 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1
Current
Limitation
Circuit
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D Note3
Body-drain diode reverse drain current
I
DR
Note 2
Avalanche current
I
AP
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg
50
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
5
5
(4.7)
(94.7)
30
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
R07DS0583EJ0100 Rev.1.00
Nov 22, 2011
Page 1 of 3

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